摘要:
A dimension measuring device 100 in accordance with the present invention includes an end face following mechanism 1 that butts against an end face E of a long material, a dimension measuring mechanism 2 for measuring the dimensions of the long material, and a pushingly moving mechanism 3 for pushingly moving the end face following mechanism toward the end face of the long material. The end face following mechanism includes a plurality of contact sensors for detecting a contact state, and is turnable around two axes intersecting at right angles with each other. The pushingly moving mechanism pushingly moves the end face following mechanism into the state in which the plurality of contact sensors detect that the end face following mechanism butts against the end face of the long material. The dimension measuring mechanism is pushingly moved integrally and is turnable integrally with the end face following mechanism, and measures the dimensions of the long material when it is detected, by the plurality of contact sensors, that the end face following mechanism butts against the end face of the long material.
摘要:
In an optical thin film of the present invention, a hydrogenated carbon film containing at least carbon and hydrogen as major components is formed on a substrate, and at least one protective layer including one of an oxide film, a nitride film, an oxynitride film, a fluoride film, and a film containing hydrogen and carbon as major components is superposed thereon.
摘要:
The present invention provides a DLC film that functions as an optical element and that can easily be miniaturized or integrated, and a method for forming the DLC film. A DLC film that has a refractive index varying continuously in at least one width direction from the center O of the DLC film. More specifically, a DLC film in which the refractive index decreases continuously in at least one width direction from the center O of the DLC film, and thereby the DLC film functions as a convex lens. A DLC film in which the refractive index increases continuously in at least one width direction from the center of the DLC film, and thereby the DLC film functions as a concave lens. A DLC film that has a refractive index varying continuously in the thickness direction. In addition, a method for forming a DLC film, including irradiating the DLC film with an energy beam to change the refractive index of the DLC film continuously in at least one width direction from the center of the DLC film and/or the thickness direction.
摘要:
A design data management program directs a computer to perform a procedure of converting design data generated at a designing side to a data format applicable to a production side and transmitting the data to the production side, and a procedure of converting the data to data described in a predetermined language and storing the data in the storage device when a notification of a change of the design data is received from the production side.
摘要:
A diamond-like carbon (DLC) film having refractive indices distributed in a pattern oriented within the plane of the film or on a bias with respect to the thickness of the film. Such films may be useful in low-cast Faraday rotators, in polarizers (analyzers), and in magnetic substances, and in Faraday rotators and optical isolators that can handle a plurality of wavelengths. The refractive index structure may be imparted to the DLC film, for example, by irradiating at least one region of the film with either a particle or energy beam.
摘要:
A design data management program directs a computer to perform a procedure of converting design data generated at a designing side to a data format applicable to a production side and transmitting the data to the production side, and a procedure of converting the data to data described in a predetermined language and storing the data in the storage device when a notification of a change of the design data is received from the production side.
摘要:
There is provided a novel bonded semiconductor wafer having a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more and manufactured by means of a bonding process, wherein at least one of the insulator layers is formed with ion implanted oxygen, and a novel manufacturing process for a bonded semiconductor wafer in which an ion implantation separation process is adopted. The novel bonded semiconductor wafer is manufactured by means of a bonding process and has a layered structure alternately stacked with semiconductor layers and insulator layers in two cycles or more, wherein at least one of the insulator layers is formed with ion implanted oxygen.
摘要:
A metal-semiconductor junction comprises a wiring metal layer and a semiconductor layer. To reduce the contact resistance of the junction, a region doped with an n- or p-type impurity and having a high carrier concentration of 1021 cm−3 or more is provided in a near-surface part of the semiconductor layer (at a distance of 10 nm or less from the metal layer. The high-carrier concentration region is composed of n- or p-type impurity layers and IV-group semiconductor layers that have been alternately deposited upon another by means of, for example, vapor-phase growth.
摘要:
A method of manufacturing a sliding component comprising a main body made of a non-carburized heat-hardened steel and a member adapted to form at least one sliding face of sliding faces of the sliding component and heat-joined to the main body, in which the steel-made main body is heat-hardened before heat-joining to the member and the heat-joining between the main body made of the heat-hardened steel and the member is conducted at a lower temperature than the temperature at which the heat-hardened main body has been heat-hardened. The sliding component is superior in hardness and abrasion resistance and is readily manufactured at a reduced cost.
摘要:
A substrate for a superconducting microwave component is composed of a pair of oxide superconductor thin films formed on opposite surfaces of a dielectric substrate, respectively. After Tl-type oxide superconducting thin films are deposited the opposite surfaces of the dielectric substrate, respectively, am annealing is performed in a thallium atmosphere.