发明授权
- 专利标题: Surface emitting semiconductor laser and its manufacturing process
- 专利标题(中): 表面发射半导体激光器及其制造工艺
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申请号: US359964申请日: 1994-12-19
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公开(公告)号: US5625637A公开(公告)日: 1997-04-29
- 发明人: Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
- 申请人: Katsumi Mori , Tatsuya Asaka , Hideaki Iwano
- 申请人地址: JPX Tokyo
- 专利权人: Seiko Epson Corporation
- 当前专利权人: Seiko Epson Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX3-64872 19910328; JPX4-52642 19920311
- 主分类号: H01S5/028
- IPC分类号: H01S5/028 ; H01S5/183 ; H01S5/22 ; H01S3/19
摘要:
A surface emitting semiconductor laser, with a resonator cavity transverse to the planar extent of the deposited layers, is provided with a first reflection mirror on the substrate side composed of alternating layers comprising a first layer that is made of a Group III-V compound semiconductor and a second layer that is made of a Group III-V compound semiconductor with an energy bandgap that is larger than that of the first layer. A second reflection mirror is provided at the opposite end of the cavity adjacent to a column like resonator portion. At least the first reflection mirror comprises a distributive Bragg reflection (DBR) multiple layer mirror that has an interface region between first and second layers having a carrier concentration that is higher than that of other regions. The column like resonator portion is surrounded by a buried layer which may consist of two layers, the first layer functioning as barrier layer and the second layer functioning as a flattening layer. The first layer may be comprised of a silicon compound and the second layer may be comprised of SOG or a resin compound. The multiple layer band structure of the DBR mirror is improved, current easily flows vertically through the multiple layers and the element resistance is low. In addition, a simple and reliable method is employed to fabricate the DBR mirror and the dual buried layer, respectively, because the doping concentration is controlled through dopant gas flow control or is controlled through light and can be easily accomplished without using comparatively high temperature processing.