发明授权
- 专利标题： Structure and method for exposing photoresist
- 专利标题（中）： 用于曝光光刻胶的结构和方法
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申请号： US452589申请日： 1995-05-25
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公开(公告)号： US5626967A公开(公告)日： 1997-05-06
- 发明人: Shekhar Pramanick , Scott Luning , Jonathon Fewkes
- 申请人： Shekhar Pramanick , Scott Luning , Jonathon Fewkes
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： G03F7/09
- IPC分类号： G03F7/09 ; H01L21/027 ; H01L21/3213 ; H01L29/06
摘要：
A structure for patterning a polysilicon layer includes a TiN layer located above an amorphous silicon (a-Si) layer forming a TiN/a-Si stack. The TiN/a-Si stack is located above the polysilicon layer. The TiN layer serves as an ARC to reduce overexposure of the photoresist used to pattern the polysilicon layer, while the a-Si layer prevents contamination of the layer below the polysilicon layer.
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