发明授权
- 专利标题: Photomask used by photolithography and a process of producing same
- 专利标题(中): 光刻使用的光掩模及其制造方法
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申请号: US447781申请日: 1995-05-23
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公开(公告)号: US5629113A公开(公告)日: 1997-05-13
- 发明人: Hisashi Watanabe
- 申请人: Hisashi Watanabe
- 申请人地址: JPX Kadoma
- 专利权人: Matsushita Electronics Corporation
- 当前专利权人: Matsushita Electronics Corporation
- 当前专利权人地址: JPX Kadoma
- 优先权: JPX2-163343 19900621
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; G03F1/26 ; G03F1/28 ; G03F1/34 ; G03F7/20 ; G03F9/00
摘要:
A photomask used by photolithography and a process for producing same which allows a single exposure to make a photomask, thereby simplifying the photomask making process, and facilitating the inspection and correction of photomasks. In addition, the phase shifter using a slanting pattern prevents a pattern from being formed outside a predetermined area. The use of a phase shifter which does not resolve under an optical projection system shields a large size area against an irradiated light, thereby allowing the formation of fine, intricate patterns suitable for use in LSIs.