发明授权
- 专利标题： Method and apparatus for SOI transistor
- 专利标题（中）： SOI晶体管的方法和装置
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申请号： US319150申请日： 1994-10-06
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公开(公告)号： US5629217A公开(公告)日： 1997-05-13
- 发明人: Hiroyuki Miwa , Takayuki Gomi , Katsuyuki Kato
- 申请人： Hiroyuki Miwa , Takayuki Gomi , Katsuyuki Kato
- 申请人地址： JPX
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JPX
- 优先权： JPX4-112714 19920501; JPX4-160263 19920527; JPX4-160264 19920527; JPX4-160265 19920527; JPX4-162306 19920528
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/22 ; H01L21/331 ; H01L21/38 ; H01L21/26 ; H01L21/265 ; H01L21/306 ; H01L21/479
摘要：
A lateral bipolar transistor capable of forming a narrow-sized diffusion region, such as a base width, is disclosed. The transistor exhibits no scattering in the direction of the depth of the width of the diffusion region. Emitter resistance is reduced by varying an impurity diffusion source at substantially a uniform concentration in a semiconductor portion and forming a diffusion region by diffusion from the impurity diffusion source. The bipolar transistor has an SOI structure. A method of making such device is also disclosed.
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