发明授权
- 专利标题: Lithography using a new phase-shifting reticle
- 专利标题(中): 使用新的相移掩模版进行平版印刷
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申请号: US396926申请日: 1995-03-01
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公开(公告)号: US5633102A公开(公告)日: 1997-05-27
- 发明人: Kenny K. H. Toh , Giang T. Dao , Eng T. Gaw , Rajeev R. Singh
- 申请人: Kenny K. H. Toh , Giang T. Dao , Eng T. Gaw , Rajeev R. Singh
- 申请人地址: CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: CA Santa Clara
- 主分类号: G03F1/34
- IPC分类号: G03F1/34 ; G03F9/00
摘要:
Methods of forming a patterned layer using a reticle having a phase-shifting element and the reticles for making the patterns are disclosed. The methods of the present invention use a phase-shifting element to change the phase of the radiation exiting a reticle about 180.degree. out of phase compared to the radiation exiting the areas immediately adjacent to an edge of the phase-shifting element so that radiation from both areas near the edge destructively interfere with each other so as to cancel out one another thereby resulting in a substantially unexposed region on a semiconductor substrate. The present invention can be used to prevent exposing a large area by using a set of phase-shifting elements to form a grating or checkerboard area.
公开/授权文献
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