发明授权
US5635426A Method of making a semiconductor device having a silicide local
interconnect
失效
制造具有硅化物局部互连的半导体器件的方法
- 专利标题： Method of making a semiconductor device having a silicide local interconnect
- 专利标题（中）： 制造具有硅化物局部互连的半导体器件的方法
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申请号： US527893申请日： 1995-09-14
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公开(公告)号： US5635426A公开(公告)日： 1997-06-03
- 发明人: Hiromi Hayashi , Atsuo Fushida , Tetsuo Izawa , Masaki Katsube , Tatsuya Yamazaki
- 申请人： Hiromi Hayashi , Atsuo Fushida , Tetsuo Izawa , Masaki Katsube , Tatsuya Yamazaki
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-211279 19930826; JPX7-078977 19950404
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/768 ; H01L21/28
摘要：
On a semiconductor substrate with an exposed silicon region, a metal layer such as Co is deposited and a silicide layer is formed by heat treatment. Thereafter, a metal layer such as Ni and a silicon layer are deposited, and one of them is patterned. The metal layer and silicon layer are heated for silicification to form a local interconnect. A semiconductor device manufacturing method is provided which uses salicide technique and can form a local interconnect of good quality.
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