Invention Grant
US5636176A Synchronous DRAM responsive to first and second clock signals 失效
响应于第一和第二时钟信号的同步DRAM

Synchronous DRAM responsive to first and second clock signals
Abstract:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disabled. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
Public/Granted literature
Information query
Patent Agency Ranking
0/0