Invention Grant
- Patent Title: Synchronous DRAM responsive to first and second clock signals
- Patent Title (中): 响应于第一和第二时钟信号的同步DRAM
-
Application No.: US362289Application Date: 1994-12-22
-
Publication No.: US5636176APublication Date: 1997-06-03
- Inventor: Masashi Hashimoto , Gene A. Frantz , John V. Moravec , Jean-Pierre Dolait
- Applicant: Masashi Hashimoto , Gene A. Frantz , John V. Moravec , Jean-Pierre Dolait
- Applicant Address: TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: TX Dallas
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C8/02 ; H04B7/185 ; G11C8/00
Abstract:
A memory circuit (14) having features specifically adapted to permit the memory circuit (14) to serve as a video frame memory is disabled. The memory circuit (14) contains a dynamic random access memory array (24) with buffers (18, 20) on input and output data ports (22) thereof to permit asynchronious read, write and refresh accesses to the memory array (24). The memory circuit (14) is accessed both serially and randomly. An address generator (28) contains an address buffer register (36) which stores a random access address and an address sequencer (40) which provides a stream of addresses to the memory array (24). An initial address for the stream of addresses is the random access address stored in the address buffer register (36).
Public/Granted literature
- US4954603A Epoxy resin Public/Granted day:1990-09-04
Information query