发明授权
- 专利标题： Method of severing a thin film semiconductor device
- 专利标题（中）： 切断薄膜半导体器件的方法
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申请号： US881345申请日： 1992-05-11
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公开(公告)号： US5637537A公开(公告)日： 1997-06-10
- 发明人: Prem Nath , Craig N. Vogeli
- 申请人： Prem Nath , Craig N. Vogeli
- 申请人地址： MI Troy
- 专利权人： United Solar Systems Corporation
- 当前专利权人： United Solar Systems Corporation
- 当前专利权人地址： MI Troy
- 主分类号： H01L31/0216
- IPC分类号： H01L31/0216 ; H01L31/20 ; H01L21/302 ; H01L21/463
摘要：
A method of severing a thin film semiconductor device. The semiconductor device includes a substrate having a first electrode region formed thereon, a semiconductor body formed of layers of thin film semiconductor alloy material disposed upon the base electrode, a transparent, electrically conductive second electrode deposited atop the semiconductor body, and a containment layer of polymeric material associated with the first or second electrode in at least one region to permit subsequent severing of the device into a plurality of devices through said containment layer region.
公开/授权文献
- US4693642A Line boring apparatus 公开/授权日：1987-09-15
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