发明授权
US5639343A Method of characterizing group III-V epitaxial semiconductor wafers
incorporating an etch stop layer
失效
表征包含蚀刻停止层的III-V族外延半导体晶片的方法
- 专利标题： Method of characterizing group III-V epitaxial semiconductor wafers incorporating an etch stop layer
- 专利标题（中）： 表征包含蚀刻停止层的III-V族外延半导体晶片的方法
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申请号： US571518申请日： 1995-12-13
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公开(公告)号： US5639343A公开(公告)日： 1997-06-17
- 发明人: Daniel Mark Dobkin
- 申请人： Daniel Mark Dobkin
- 申请人地址： CA Palo Alto
- 专利权人： Watkins-Johnson Company
- 当前专利权人： Watkins-Johnson Company
- 当前专利权人地址： CA Palo Alto
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/66 ; C09K13/00 ; H01L21/00
摘要：
The present invention comprises a method of characterizing a group III-V epitaxial semiconductor wafer in a characterization profiling apparatus having an electrolytic cell. The wafer contains at least a Group III-V compound first-layer and a thin etch stop layer atop of the first layer and at least one second layer atop of the etch stop layer having a differing composition from the etch stop layer. The wafer is placed in the electrolytic cell and the surface of the at-least second layer is etched with a citrate buffer solution of citric acid and a salt of citric acid under anodic bias conditions. The etchant is highly selective and etching terminates upon reaching the etch stop layer. A Schottky diode is formed between the wafer and the solution, and the wafer is characterized in situ by performing capacitance-voltage measurements which are evaluated to determine the threshold voltage of the semiconductor wafer.
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