公开(公告)号：US20070092732A1

公开(公告)日：2007-04-26

申请号：US11606425

申请日：2006-11-29

申请人： Peter Rose ,  Eugene Lopata ,  John Felts

发明人： Peter Rose ,  Eugene Lopata ,  John Felts

IPC分类号： B32B9/04

CPC分类号： H01L21/3125 ,  C09D4/00 ,  C23C16/30 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/3124 ,  H01L21/31633 ,  Y10T428/24917 ,  Y10T428/31504 ,  Y10T428/31663 ,  C08G77/00 ,  C08G77/04

摘要： A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.

摘要翻译： 提供了一种通过化学气相沉积（CVD）在半导体和/或集成电路中沉积显示低介电常数的介电膜的方法。 该膜使用有机硅前体以这样的方式沉积，使得膜由主要由Si-O-Si或Si-N-Si基团制成，有机侧基连接到主链上。

公开(公告)号：US5974081A

公开(公告)日：1999-10-26

申请号：US716859

申请日：1996-09-19

申请人： Luis A. Rosas ,  Robert E. Watson ,  Douglas M. Farinelli ,  Brian T. Koenigsmark

发明人： Luis A. Rosas ,  Robert E. Watson ,  Douglas M. Farinelli ,  Brian T. Koenigsmark

IPC分类号： H04B1/713

CPC分类号： H04B1/713

摘要： A wayside station communicates with a plurality of mobile stations over a wireless communication network. In one embodiment, a wayside station includes a transceiver configured to receive an inbound signal from a mobile station and to transmit an outbound signal to the mobile station. The transceiver has a first switch that is configured to selectively deliver the inbound signal to one of a first band pass filter (BPF) and a second BPF. A second switch is coupled to the first BPF and to the second BPF, and configured to selectively receive the inbound signal from one of the first BPF and the second BPF. A detector is coupled to the second switch and configured to detect the inbound signal, to convert the inbound signal to inbound data and to transfer the inbound data to a processor. The processor decodes the inbound data and processes the data. Outbound data is processed and encoded by the processor, transferred to the transmitter as an outbound signal and communicated to the mobile station over the wireless communication network.

摘要翻译： 路边站通过无线通信网络与多个移动站进行通信。 在一个实施例中，路边站包括被配置为从移动站接收入站信号并向移动站发送出站信号的收发机。 收发器具有被配置为选择性地将入站信号传送到第一带通滤波器（BPF）和第二BPF之一的第一开关。 第二开关耦合到第一BPF和第二BPF，并且被配置为选择性地从第一BPF和第二BPF之一接收入站信号。 检测器耦合到第二开关并被配置为检测入站信号，将入站信号转换为入站数据并将入站数据传送到处理器。 处理器解码入站数据并处理数据。 出站数据由处理器处理和编码，作为出站信号传送到发射机，并通过无线通信网络传送到移动台。

公开(公告)号：USRE36185E

公开(公告)日：1999-04-06

申请号：US751776

申请日：1996-12-05

申请人： Ronald E. Remba ,  Paul E. Brunemeier ,  Bruce C. Schmukler ,  Walter A. Strifler ,  Daniel H. Rosenblatt

发明人： Ronald E. Remba ,  Paul E. Brunemeier ,  Bruce C. Schmukler ,  Walter A. Strifler ,  Daniel H. Rosenblatt

IPC分类号： C23F1/02 ,  C09K13/06 ,  C23F1/16 ,  C30B33/10 ,  H01L21/306 ,  H01L21/308 ,  H01L21/335 ,  H01L21/338 ,  H01L29/812 ,  B44C1/22

CPC分类号： H01L29/66462 ,  H01L21/30612

摘要： A solution of hydrogen peroxide �H.sub.2 O.sub.2 !, citric acid �HOC(CH.sub.2 COOH).sub.2 COOH.H.sub.2 O!, and a salt of citric acid such as potassium citrate �HOC(CH.sub.2 COOK).sub.2 COOK.H.sub.2 O!, and hydrogen peroxide �H.sub.2 O.sub.2 !, in a proper pH range, selectively etches GaAs-containing Group III-V compounds in the presence of other Group III-V compounds. As an illustration, Al.sub.y Ga.sub.1-y As is selectively etched in the presence of Al.sub.x Ga.sub.1-x As (0.ltoreq.y 0.2) when the pH range of the etchant solution is between approximately 3 and 6. The etchant solution described herein may be utilized in the fabrication of, for example, high-frequency transistors exhibiting improved saturated current (I.sub.dss) and threshold voltage (V.sub.th) uniformity.

摘要翻译： 将过氧化氢[H 2 O 2]，柠檬酸[HOC（CH 2 COOH）2 COOH·H 2 O]和柠檬酸盐如柠檬酸钾[HOC（CH 2 COOK）2 COOK.H 2 O]和过氧化氢[H 2 O 2] 适当的pH范围，在其他III-V族化合物的存在下选择性蚀刻含GaAs的III-V族化合物。 作为说明，当蚀刻剂溶液的pH范围在约3和6之间时，在Al x Ga 1-x As（0≤y<0.2> x> 0.2）的存在下，选择性地蚀刻Al y Ga 1-y As。本文所述的蚀刻剂溶液 可以用于制造例如表现出改进的饱和电流（Idss）和阈值电压（Vth）均匀性的高频晶体管。

公开(公告)号：US5873036A

公开(公告)日：1999-02-16

申请号：US717300

申请日：1996-09-20

申请人： Jelena Vucetic

发明人： Jelena Vucetic

IPC分类号： H04W4/06 ,  H04W8/26 ,  H04W36/00 ,  H04W36/12 ,  H04W72/00 ,  H04W72/04 ,  H04W84/04 ,  H04Q7/22

CPC分类号： H04W72/1289 ,  H04W36/0055 ,  H04W36/30

摘要： A base station (BS) communicates with a plurality of mobile users in a platform. In one embodiment, the base station and mobile services center (MSC) associates all the mobile users with the platform. The BS and MSC then associate a movement of the platform from one cell to another with a handoff of all the mobile users in the platform. The handoff is complete while the overhead is minimized. Exemplary embodiments are provided for use with the Advanced Mobile Phone Service (AMPS) protocol.

摘要翻译： 基站（BS）与平台中的多个移动用户进行通信。 在一个实施例中，基站和移动服务中心（MSC）将所有移动用户与平台相关联。 然后，BS和MSC将平台的移动从一个小区与另一个小区的移动相关联，其中平台中的所有移动用户的切换。 切换完成，而开销最小化。 提供了与高级移动电话服务（AMPS）协议一起使用的示例性实施例。

公开(公告)号：US5854974A

公开(公告)日：1998-12-29

申请号：US420249

申请日：1995-04-11

申请人： Xiaohui Li

发明人： Xiaohui Li

IPC分类号： H03D7/02 ,  H03D7/14 ,  H04B1/26

CPC分类号： H03D7/1408

摘要： A compensated mixer including a radio frequency (RF) balun through which RF signals are transferred, and a local oscillator (LO) balun for receiving an LO signal. In an exemplary implementation the mixer further includes a diode ring quad circuit for mixing RF signals received by the RF balun with the LO signal received by the LO balun. During operation the diode ring quad circuit develops, between first and second nodes therein, a capacitive reactance arising from switching at the LO frequency. The mixer further includes a compensation inductor, connected between the first and second nodes, for cancelling the effect of the capacitive reactance at the LO signal frequency.

摘要翻译： 包括RF信号被传送的射频（RF）平衡不平衡变压器和用于接收LO信号的本地振荡器（LO）平衡 - 不平衡变压器的补偿混频器。 在示例性实施例中，混频器还包括用于将由RF平衡 - 不平衡变换器接收的RF信号与由LO平衡 - 不平衡变换器接收的LO信号混合的二极管环四路电路。 在操作期间，二极管环四路电路在其中的第一和第二节点之间产生由LO频率处的开关引起的容性电抗。 混频器还包括连接在第一和第二节点之间的补偿电感器，用于消除在LO信号频率处的电容性电抗的影响。

公开(公告)号：US5838528A

公开(公告)日：1998-11-17

申请号：US883366

申请日：1997-06-26

申请人： Ron van Os ,  Eric D. Ross

发明人： Ron van Os ,  Eric D. Ross

IPC分类号： B25J15/06 ,  C23C16/458 ,  H01L21/00 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/67103 ,  C23C16/4586 ,  H01L21/6831 ,  H02N13/00 ,  Y10T279/23

摘要： An electrostatic support system for retaining a wafer. The support system generally includes a support body having a support surface for retaining said wafer, a voltage source coupled to the support body for electrostatically coupling the wafer to the support surface, and a cooling system for cooling the wafer. A plurality of arm members extend from the support body to a carriage assembly for releasably mounting the support body to the processing chamber with the support body and the arm members separated from the chamber floor. This invention also includes the method of supporting a wafer in a processing chamber which includes the steps of positioning the wafer on a wafer supporting surface, applying a voltage to an electrode assembly to electrostatically attract the wafer to the support surface and, after processing the wafer, substantially grounding the electrode assembly to sufficiently deactivate the electrostatic charge for release of the wafer from the support surface.

摘要翻译： 一种用于保持晶片的静电支撑系统。 支撑系统通常包括具有用于保持所述晶片的支撑表面的支撑体，耦合到支撑体的电压源，用于将晶片静电耦合到支撑表面，以及用于冷却晶片的冷却系统。 多个臂构件从支撑体延伸到托架组件，用于将支撑体可释放地安装到处理室，其中支撑体和臂构件与腔室地板分离。 本发明还包括在处理室中支撑晶片的方法，其包括以下步骤：将晶片定位在晶片支撑表面上，向电极组件施加电压以将晶片静电吸引到支撑表面，并且在处理晶片之后 ，使电极组件基本上接地以充分地去除静电电荷，以使晶片从支撑表面释放。

公开(公告)号：US5799248A

公开(公告)日：1998-08-25

申请号：US575409

申请日：1995-12-20

申请人： Michael W. Vice

发明人： Michael W. Vice

IPC分类号： H03D7/12 ,  H03D7/14 ,  H03D9/06 ,  H04B1/28

CPC分类号： H03D9/0675 ,  H03D2200/0023 ,  H03D2200/0043 ,  H03D2200/0074 ,  H03D2200/0088 ,  H03D2200/009 ,  H03D7/125 ,  H03D7/14

摘要： FET mixers requiring relatively low local oscillator power levels and having excellent isolation of the local oscillator signal relative to the radio and intermediate frequency signal. The mixer comprises a first and second FET transistor (Q1, Q2) having their gates and sources connected together such that the first and second FET transistors are in series; a local oscillator input circuit; a coupling network comprising a transmission line balun; a diplexer circuit; and a bias circuit. In one aspect, the transmission line balun divides the voltage of an incident traveling wave equally between the first and second transmission line components, and sums the currents of traveling waves generated by the transmission line components to generate an exitant traveling wave signal. The RF signal is completely reflected by each the FET transistors with no phase shift when they are nonconducting (OFF), and completely reflected by each of the FET transistors with a 180.degree. phase shift when they are conducting (ON) owing to the different relative impedances. A diplexer circuit separates an intermediate frequency signal from the exitant traveling wave signal, and substantially all of said RF signal incident on the first and second FETs is reflected from the FETs during ON and OFF conduction state such that commutation of the RF signal during each half cycle of the local oscillator signal is symmetrical, and such that the RF reflected signal components in the reflected wave are substantially canceled from the exitant traveling wave to generate the intermediate-frequency (IF) signal.

摘要翻译： FET混频器需要相对较低的本地振荡器功率电平，并且具有相对于无线电和中频信号的本地振荡器信号的优异隔离。 混频器包括第一和第二FET晶体管（Q1，Q2），其栅极和源极连接在一起，使得第一和第二FET晶体管串联; 本地振荡器输入电路; 耦合网络，包括传输线巴伦; 双工器电路; 和偏置电路。 一方面，传输线平衡 - 不平衡变换器将入射行波的电压在第一和第二传输线分量之间平均分配，并且将由传输线分量产生的行波的电流相加以产生出射行波信号。 当RF晶体管不导通（OFF）时，每个FET晶体管被完全反射，每个FET晶体管在导通（ON）时由相位偏移180°完全被每个FET晶体管反射，由于相对不同 阻力。 双工器电路将中频信号与出射行波信号分开，入射到第一和第二FET的基本上所有的RF信号在导通和截止导通状态期间都从FET反射，从而使得每一半的RF信号的换向 本地振荡器信号的周期是对称的，并且使得反射波中的RF反射信号分量基本上从出射行波消除，以产生中频（IF）信号。

公开(公告)号：US5732345A

公开(公告)日：1998-03-24

申请号：US575293

申请日：1995-12-20

申请人： Michael W. Vice

发明人： Michael W. Vice

IPC分类号： H03D7/14 ,  H04B1/28 ,  H04B1/26

CPC分类号： H03D7/1441 ,  H03D7/1466 ,  H03D2200/0023 ,  H03D2200/0043 ,  H03D2200/0088

摘要： A double balanced dual-quad transformer dual field effect transistor (FET) mixer is disclosed using a first and second (FET) which have their gates electrically connected together, such that the first and second FET are connected in series. The mixer achieves improved isolation by using a first and second diplexer, and an RF and IF coupling network which comprises a flux-coupled IF transformer and a transmission line RF balun.

摘要翻译： 公开了使用其栅极电连接在一起的第一和第二FET（FET）的双平衡双四变压器双场效应晶体管（FET）混频器，使得第一和第二FET串联连接。 混频器通过使用第一和第二双工器以及RF和IF耦合网络实现改进的隔离，RF和IF耦合网络包括磁通耦合IF变压器和传输线RF巴伦。

公开(公告)号：US5678226A

公开(公告)日：1997-10-14

申请号：US333775

申请日：1994-11-03

申请人： Xiaohui Li ,  Michael Wendell Vice

发明人： Xiaohui Li ,  Michael Wendell Vice

IPC分类号： H03D7/12 ,  H04B1/28

CPC分类号： H03D7/125 ,  H04B1/28

摘要： A unbalanced mixer capable of operation in the absence of DC bias is disclosed herein. The mixer includes an input or local oscillator (LO) port for receiving an input signal. A first transistor has a control terminal coupled to the mixer input port, and an output terminal coupled to a first signal port of the mixer. The mixer further includes a resonator circuit, connected between the transistor control and output terminals, for providing signal isolation between the mixer input port and the first signal port. In a preferred implementation the resonator circuit comprises an inductive element in parallel with a first intrinsic capacitance of the transistor. The mixer may also include a diplexer circuit for coupling signal energy of a first frequency between the output terminal and the first signal port, and for coupling signal energy of a second frequency between the output terminal and a second signal port. A series resonant circuit, connected between the input or LO port and the transistor control terminal, may also be provided for amplifying the input signal. In a preferred implementation the series resonant circuit comprises an input inductive element and an input intrinsic capacitance of the first transistor.

摘要翻译： 本文公开了能够在没有DC偏压的情况下操作的不平衡混合器。 混频器包括用于接收输入信号的输入或本地振荡器（LO）端口。 第一晶体管具有耦合到混频器输入端口的控制端子和耦合到混频器的第一信号端口的输出端子。 混频器还包括连接在晶体管控制和输出端之间的谐振器电路，用于在混频器输入端口和第一信号端口之间提供信号隔离。 在优选实施例中，谐振器电路包括与晶体管的第一本征电容并联的电感元件。 混频器还可以包括用于耦合在输出端和第一信号端口之间的第一频率的信号能量的双工器电路，以及用于耦合输出端和第二信号端口之间的第二频率的信号能量。 连接在输入或LO端口和晶体管控制端子之间的串联谐振电路也可以用于放大输入信号。 在优选实施例中，串联谐振电路包括输入电感元件和第一晶体管的输入固有电容。

公开(公告)号：US5639343A

公开(公告)日：1997-06-17

申请号：US571518

申请日：1995-12-13

申请人： Daniel Mark Dobkin

发明人： Daniel Mark Dobkin

IPC分类号： H01L21/306 ,  H01L21/66 ,  C09K13/00 ,  H01L21/00

CPC分类号： H01L22/14

摘要： The present invention comprises a method of characterizing a group III-V epitaxial semiconductor wafer in a characterization profiling apparatus having an electrolytic cell. The wafer contains at least a Group III-V compound first-layer and a thin etch stop layer atop of the first layer and at least one second layer atop of the etch stop layer having a differing composition from the etch stop layer. The wafer is placed in the electrolytic cell and the surface of the at-least second layer is etched with a citrate buffer solution of citric acid and a salt of citric acid under anodic bias conditions. The etchant is highly selective and etching terminates upon reaching the etch stop layer. A Schottky diode is formed between the wafer and the solution, and the wafer is characterized in situ by performing capacitance-voltage measurements which are evaluated to determine the threshold voltage of the semiconductor wafer.

摘要翻译： 本发明包括在具有电解池的表征分析装置中表征III-V族外延半导体晶片的方法。 晶片在第一层顶部至少含有III-V族化合物第一层和薄的蚀刻停止层，并且在蚀刻停止层的顶部具有与蚀刻停止层不同的组成的至少一个第二层。 将晶片放置在电解槽中，并且在阳极偏压条件下，用柠檬酸柠檬酸盐缓冲溶液和柠檬酸盐蚀刻至少第二层的表面。 蚀刻剂是高选择性的，并且蚀刻在到达蚀刻停止层时终止。 在晶片和溶液之间形成肖特基二极管，并且通过进行电容电压测量来表征晶片，该电容电压测量被评估以确定半导体晶片的阈值电压。