发明授权
US5642317A Semiconductor memory device incorporating a test mechanism 失效
包含测试机构的半导体存储器件

Semiconductor memory device incorporating a test mechanism
摘要:
To present a semiconductor memory device incorporating a test mechanism in order to test plural semiconductor memory devices by using a tester having a single data judging circuit. The drain electrode of an N type MOSFET (Q16) is connected to a power source potential (V.sub.CC) through a fuse element (F1) (route cut-off element), and the source electrode is connected to the drain electrode of an N type MOSFET (Q17), and the drain electrode of the N type MOSFET (Q16) is connected to the input of an inverter (G16), and is also connected to a resistance element (R1) connected to a grounding potential (V.sub.SS). Therefore, since the test mechanism is incorporated, parallel tests are conducted by the inexpensive tester having only one data judging circuit, and thereafter by judging the results of comparison individually by using the same tester, the qualification of the semiconductor memory device can be judged.
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