发明授权
US5644162A Semiconductor chip having chip metal layer and transfer metal layer
composed of same metal, and corresponding electronic module
失效
具有芯片金属层和由相同金属组成的转移金属层的半导体芯片及相应的电子模块
- 专利标题: Semiconductor chip having chip metal layer and transfer metal layer composed of same metal, and corresponding electronic module
- 专利标题(中): 具有芯片金属层和由相同金属组成的转移金属层的半导体芯片及相应的电子模块
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申请号: US660556申请日: 1996-06-10
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公开(公告)号: US5644162A公开(公告)日: 1997-07-01
- 发明人: Kenneth Edward Beilstein, Jr. , Claude Louis Bertin , Timothy Harrison Daubenspeck , Wayne John Howell
- 申请人: Kenneth Edward Beilstein, Jr. , Claude Louis Bertin , Timothy Harrison Daubenspeck , Wayne John Howell
- 申请人地址: NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: NY Armonk
- 主分类号: H01L25/18
- IPC分类号: H01L25/18 ; H01L21/02 ; H01L21/301 ; H01L21/3205 ; H01L21/822 ; H01L21/98 ; H01L23/52 ; H01L25/065 ; H01L25/07 ; H01L27/00 ; H01L27/04 ; H01L23/48
摘要:
A fabrication method including a semiconductor chip kerf clear process and a resulting semiconductor chip and electronic module formed thereby. The fabrication method includes providing a wafer comprising a plurality of integrated circuit chips having kerf regions between them. Chip metallization is present within the kerf regions. A photolithography process is used to protect the wafer exposing only the kerf regions. Next, the wafer is etched, clearing the chip metallization from the kerf regions. The wafer is then diced and the chips are stacked to form a monolithic electronic module. A side surface of the electronic module is processed to expose transfer metals extending thereto, thereby facilitating electrical connection to the chips within the electronic module. Specific details of the fabrication method, resulting integrated circuit chips and monolithic electronic module are set forth.
公开/授权文献
- US5198904A Aural carrier correction system and method 公开/授权日:1993-03-30
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