发明授权
- 专利标题: Semiconductor memory device using dynamic type memory cells
- 专利标题(中): 半导体存储器件采用动态型存储单元
-
申请号: US570966申请日: 1995-12-12
-
公开(公告)号: US5661678A公开(公告)日: 1997-08-26
- 发明人: Masako Yoshida , Yukihito Oowaki , Takehiro Hasegawa , Kiyofumi Ochii , Masayuki Koizumi
- 申请人: Masako Yoshida , Yukihito Oowaki , Takehiro Hasegawa , Kiyofumi Ochii , Masayuki Koizumi
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX6-307323 19941212; JPX7-047550 19950307
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242 ; G11C11/404 ; G11C11/405 ; H01L27/108 ; G11C7/00
摘要:
A semiconductor memory device comprises a memory cell array including NAND type memory cell units arranged in matrix and having a plurality of dynamic type memory cells connected in series, a plurality of word lines, a plurality of bit lines arranged within the memory cell array, the plurality of bit lines including a bit line pairs which are arranged adjacent to each other or between which at least one bit line is interposed, and a plurality of sense amplifiers of a folded bit line type, provided in each of the plurality of bit line pairs, in which the memory cells are provided in positions corresponding to intersections of the bit lines and the word lines, and complementary data are written to two memory cells connected to each of the plurality of bit line pairs and one word line, and the two memory cells store one-bit data.
公开/授权文献
信息查询
IPC分类: