发明授权
- 专利标题： Process for forming diamond-like thin film
- 专利标题（中）： 形成金刚石薄膜的方法
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申请号： US827853申请日： 1992-01-30
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公开(公告)号： US5662877A公开(公告)日： 1997-09-02
- 发明人: Masanori Shibahara , Kunihiro Ueda , Masatoshi Nakayama
- 申请人： Masanori Shibahara , Kunihiro Ueda , Masatoshi Nakayama
- 申请人地址： JPX Tokyo
- 专利权人： TDK Corporation
- 当前专利权人： TDK Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX1-214913 19890823
- 主分类号： C30B29/04
- IPC分类号： C30B29/04 ; C23C16/02 ; C23C16/26 ; C23C16/27 ; C23C16/50 ; C30B25/02
摘要：
The present invention improves the adhesive property by pretreating under uniform conditions the substrate surface of metal, ceramics or glass etc. with a poor adhesive property, by accelerating ions under an electric field to the substrate in advance of a diamond-like film forming process. In light of the fact that a diamond-like film forming process by ionized deposition uses thermal electron ionization means and an electric potential is applied to a grid to accelerate ionized hydrocarbon ions, the present invention could attain the aimed purpose by ionizing and then accelerating a bombardment gas such as argon as a pretreatment process in the same apparatus.
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