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US5665979A Coulomb-blockade element and method of manufacturing the same 失效
库仑封锁元件及其制造方法

Coulomb-blockade element and method of manufacturing the same
摘要:
A Coulomb-blockade element includes a silicon layer formed on a substrate through an insulating film. The silicon layer includes a narrow wire portion and first and second electrode portions. The narrow wire portion serves as a conductive island for confining a charge. The first and second electrode portions are formed to be connected to the two ends of the narrow wire portion and are wider than the narrow wire portion. Each of the first and second electrode portions has constrictions on at least one of the upper and lower surfaces thereof, which make a portion near the narrow wire portion thinner than the narrow wire portion.
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