发明授权
US5675185A Semiconductor structure incorporating thin film transistors with undoped
cap oxide layers
失效
结合具有未掺杂的帽氧化物层的薄膜晶体管的半导体结构
- 专利标题： Semiconductor structure incorporating thin film transistors with undoped cap oxide layers
- 专利标题（中）： 结合具有未掺杂的帽氧化物层的薄膜晶体管的半导体结构
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申请号： US537219申请日： 1995-09-29
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公开(公告)号： US5675185A公开(公告)日： 1997-10-07
- 发明人: Bomy Able Chen , Subhash Balakrishna Kulkarni , Jerome Bret Lasky , Randy William Mann , Edward Joseph Nowak , Werner Alois Rausch , Francis Roger White
- 申请人： Bomy Able Chen , Subhash Balakrishna Kulkarni , Jerome Bret Lasky , Randy William Mann , Edward Joseph Nowak , Werner Alois Rausch , Francis Roger White
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L27/11 ; H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
An improved field effect transistor (FET) structure is disclosed. It comprises a first insulator layer containing at least one primary level stud extending through the layer; an undoped cap oxide layer disposed over the insulator layer and abutting the upper region of each stud; a primary level thin film transistor (TFT) disposed over the undoped cap oxide layer; and a planarized oxide layer disposed over the TFT. Multiple TFT's can be stacked vertically, and connected to other levels of studs and metal interconnection layers. Another embodiment of the invention includes the use of a protective interfacial cap over the surface of tungsten-type studs. The FET structure can serve as a component of a static random access memory (SRAM) cell. Related processes are also disclosed.