发明授权
US5677113A Method for ashing a photoresist resin film on a semiconductor wafer and
an asher
失效
在半导体晶片和灰浆上灰化光致抗蚀剂树脂膜的方法
- 专利标题： Method for ashing a photoresist resin film on a semiconductor wafer and an asher
- 专利标题（中）： 在半导体晶片和灰浆上灰化光致抗蚀剂树脂膜的方法
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申请号： US436679申请日： 1995-05-08
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公开(公告)号： US5677113A公开(公告)日： 1997-10-14
- 发明人: Shinji Suzuki , Kyohei Seki , Nobutoshi Ebashi , Tetsuji Arai
- 申请人： Shinji Suzuki , Kyohei Seki , Nobutoshi Ebashi , Tetsuji Arai
- 申请人地址： JPX Tokyo
- 专利权人： Ushiodenki Kabushiki Kaisha
- 当前专利权人： Ushiodenki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX3-297610 19911018
- 主分类号： G03F7/42
- IPC分类号： G03F7/42 ; H01L21/027 ; H01L21/30 ; H01L21/302 ; H01L21/3065 ; H01L21/311
摘要：
The object of the invention is to provide an ashing method and an asher in order to avoid damage to semiconductor components occurring during ashing of a photoresist resin film by active oxygen plasma and to avoid a long treatment time occurring in an ashing method using a low pressure mercury discharge lamp. According to the invention, this object is achieved by a method and an apparatus for ashing a photoresist resin film. In the method, a wafer provided with a photoresist resin film is placed in an ozone-containing atmosphere. An activated oxygen is produced through the radiation light of a discharge lamp, which emits a continuous spectrum in a wavelength range of 200 to 300 nm. The photoresist resin film is ashed by the activated oxygen.
公开/授权文献
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