发明授权
- 专利标题： Semiconductor substrate and process for preparing the same
- 专利标题（中）： 半导体衬底及其制备方法
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申请号： US368539申请日： 1995-01-04
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公开(公告)号： US5679475A公开(公告)日： 1997-10-21
- 发明人: Kenji Yamagata , Takao Yonehara
- 申请人： Kenji Yamagata , Takao Yonehara
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX4-16511 19920131
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/306 ; H01L21/762 ; H01L27/12 ; B32B15/00
摘要：
A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtaining a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.
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