公开(公告)号：US20120138455A1

公开(公告)日：2012-06-07

申请号：US13310083

申请日：2011-12-02

Applicant: Yasuyoshi MIYAJI ,  Noriyuki HAYASHI ,  Takamitsu INAHARA ,  Takao YONEHARA ,  Karl-Josef KRAMER ,  Subramanian TAMILMANI

Inventor： Yasuyoshi MIYAJI ,  Noriyuki HAYASHI ,  Takamitsu INAHARA ,  Takao YONEHARA ,  Karl-Josef KRAMER ,  Subramanian TAMILMANI

IPC: C25D17/00

CPC classification number: C25D11/005 ,  C25D17/002 ,  C25D17/005 ,  C25D17/02 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/138 ,  Y10S414/139 ,  Y10S414/14 ,  Y10S414/141

Abstract: An apparatus for anodizing substrates immersed in an electrolyte solution. A substrate holder mounted in a storage tank includes a first support unit having first support elements for supporting, in a liquid-tight condition, only lower circumferential portions of the substrates, and a second support unit attachable to and detachable from the first support unit and having second support elements for supporting, in a liquid-tight condition, remaining circumferential portions of the substrates. A drive mechanism separates the first support unit and the second support unit when loading and unloading the substrates, and for connecting the first support unit and the second support unit after the substrates are placed in the substrate holder.

Abstract translation: 用于阳极氧化沉积在电解质溶液中的基底的装置。 安装在储罐中的基板支架包括第一支撑单元，该第一支撑单元具有第一支撑元件，该第一支撑元件用于在液密状态下仅支撑基板的下周边部分;以及第二支撑单元，其可附接到第一支撑单元并且可从第一支撑单元拆卸; 具有用于在液密条件下支撑基板的剩余周向部分的第二支撑元件。 驱动机构在装载和卸载基板时分离第一支撑单元和第二支撑单元，并且在将基板放置在基板支架中之后连接第一支撑单元和第二支撑单元。

公开(公告)号：US20110256654A1

公开(公告)日：2011-10-20

申请号：US13026239

申请日：2011-02-12

Applicant: Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Pawan Kapur ,  Somnath Nag ,  George D Kamian ,  Jay Ashjaee ,  Takao Yonehara

Inventor： Mehrdad M. Moslehi ,  Karl-Josef Kramer ,  David Xuan-Qi Wang ,  Pawan Kapur ,  Somnath Nag ,  George D Kamian ,  Jay Ashjaee ,  Takao Yonehara

IPC: H01L21/20 ,  C23C16/00 ,  C25D21/12 ,  H01L31/18

CPC classification number: H01L21/20 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract translation: 本公开提供了从可再使用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。 对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。

公开(公告)号：US07943488B2

公开(公告)日：2011-05-17

申请号：US12611761

申请日：2009-11-03

Applicant: Takao Yonehara

Inventor： Takao Yonehara

IPC: H01L21/52 ,  H01L21/00

CPC classification number: H01L27/153 ,  B41J2/45 ,  H01L33/0079

Abstract: A method includes placing a first bonding layer on at least one of a first functional region bonded on a release layer with a light releasable adhesive layer on a first substrate, and a transfer region on a second substrate; bonding the first functional region to the second substrate by the first bonding layer; irradiating the release layer with light with a light blocking member being provided to separate the first substrate from the first functional region at the release layer; placing a second bonding layer on at least one of a second functional region on the first substrate, and a transfer region on the release layer or a transfer region on a third substrate; bonding the second functional region to the second substrate or the third substrate by the second bonding layer; and separating the first substrate from the second functional region at the release layer.

Abstract translation: 一种方法包括将第一结合层放置在第一基板上的第一功能区域和第二基板上的转印区域上，所述第一功能区域与剥离层上的第一功能区域和第一基板上的可光剥离的粘合剂层接合; 通过第一接合层将第一功能区域接合到第二基板; 用提供遮光部件的光照射剥离层，以在剥离层处将第一基板与第一功能区域分离; 在第一基板上的第二功能区域和剥离层上的转印区域或第三基板上的转印区域中的至少一个上放置第二粘合层; 通过第二接合层将第二功能区域接合到第二基板或第三基板; 以及在所述释放层处将所述第一基底与所述第二功能区分离。

公开(公告)号：US07829362B2

公开(公告)日：2010-11-09

申请号：US11945838

申请日：2007-11-27

Applicant: Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

Inventor： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Yohei Ishida ,  Tohru Den

IPC: H01L21/336

CPC classification number: G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

Abstract translation: 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

公开(公告)号：US20100159678A1

公开(公告)日：2010-06-24

申请号：US12719796

申请日：2010-03-08

Applicant: Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

Inventor： Ammar Munir Nayfeh ,  Chi On Chui ,  Krishna C. Saraswat ,  Takao Yonehara

IPC: H01L21/20

CPC classification number: H01L29/518 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/2807 ,  H01L21/28255 ,  H01L29/16 ,  H01L29/165 ,  H01L29/513 ,  H01L29/66575 ,  H01L29/94

Abstract: Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.

Abstract translation: 锗电路型结构方便。 在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。 在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。 这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

公开(公告)号：US20080076201A1

公开(公告)日：2008-03-27

申请号：US11945838

申请日：2007-11-27

Applicant: Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

Inventor： Kazuhiko Fukutani ,  Takao Yonehara ,  Hirokatsu Miyata ,  Youhei Ishida ,  Tohru Den

IPC: H01L21/00

CPC classification number: G01N27/4146 ,  Y10S438/96 ,  Y10T436/11 ,  Y10T436/114165

Abstract: A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.

Abstract translation: 通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。 它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。 作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜 氧化物，其具有垂直于衬底的孔。

公开(公告)号：US20070285666A1

公开(公告)日：2007-12-13

申请号：US11659717

申请日：2005-09-14

Applicant: Norihiko Utsunomiya ,  Mitsuro Sugita ,  Satoru Nishiuma ,  Takao Yonehara

Inventor： Norihiko Utsunomiya ,  Mitsuro Sugita ,  Satoru Nishiuma ,  Takao Yonehara

IPC: G01N21/00

CPC classification number: G01N21/554 ,  G01N21/648 ,  G01N2021/258 ,  G01N2201/0635 ,  G01N2201/0636

Abstract: An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.

Abstract translation: 一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其 要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上 使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。

公开(公告)号：US07148119B1

公开(公告)日：2006-12-12

申请号：US09161774

申请日：1998-09-29

Applicant: Kiyofumi Sakaguchi ,  Takao Yonehara

Inventor： Kiyofumi Sakaguchi ,  Takao Yonehara

IPC: H01L23/12

CPC classification number: H01L21/6835 ,  H01L21/76259 ,  H01L2221/68363

Abstract: A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

Abstract translation: 提供了一种制造半导体衬底的方法，其包括在第一衬底上形成多孔层的步骤，在第一衬底的多孔层上形成无孔单晶半导体层，将无孔单晶层接合到第二衬底上， 在多孔层上的基底，去除第二基底上的多孔层，以及去除构成第一基底的多孔层。

公开(公告)号：US20060147169A1

公开(公告)日：2006-07-06

申请号：US10545157

申请日：2004-08-27

Applicant: Mitsuro Sugita ,  Takao Yonehara

Inventor： Mitsuro Sugita ,  Takao Yonehara

IPC: G02B6/10 ,  C03B37/023 ,  C03B37/022

CPC classification number: G01N21/774 ,  B82Y20/00 ,  G01N21/7746 ,  G02B6/1225 ,  G02B6/1228 ,  G02B6/125 ,  G02B6/131 ,  G02B2006/12176

Abstract: An optical device comprising a substrate, a porous layer laid on the substrate having a pore diameter smaller than the wavelength of light and a crystal layer laid on the porous layer showing a refractive index greater than that of the porous layer is presented. The optical device is manufactured by a method comprising a step of forming a porous layer having a pore diameter smaller than the wavelength of light on the surface of a substrate and a step of forming a crystal layer showing a refractive index greater than that of the porous layer on the porous layer. Since the porous layer is clad, light can be confined with ease.

Abstract translation: 提供了一种光学装置，其包括基底，放置在基底上的孔径小于光波长的多孔层和放置在多孔层上的结晶层，其折射率大于多孔层的折射率。 该光学器件通过包括形成孔径小于衬底表面上的光的波长的多孔层的步骤的方法制造，并且形成表现出比多孔层的折射率更大的折射率的晶体层的步骤 在多孔层上。 由于多孔层被包覆，所以可以容易地限制光。

公开(公告)号：US20050148122A1

公开(公告)日：2005-07-07

申请号：US11039845

申请日：2005-01-24

Applicant: Takao Yonehara

Inventor： Takao Yonehara

IPC: H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/12 ,  H01L21/00 ,  H01L21/30

CPC classification number: H01L21/76259 ,  H01L21/76254

Abstract: A step of forming the first substrate which has a separation layer and a Ge layer on the separation layer, and a step of forming a bonded substrate stack by bonding the first substrate to the second substrate through an insulating layer, and a step of dividing the bonded substrate stack at the separation layer are performed, thereby obtaining a substrate with a GOI structure.

Abstract translation: 在分离层上形成具有分离层和Ge层的第一衬底的步骤，以及通过绝缘层将第一衬底粘合到第二衬底上而形成键合衬底叠层的步骤，以及将第 进行分离层的键合衬底叠层，从而获得具有GOI结构的衬底。