发明授权
US5679608A Processing techniques for achieving production-worthy, low dielectric,
low dielectric, low interconnect resistance and high performance IC
失效
用于实现生产有价值，低电介质，低电介质，低互连电阻和高性能IC的加工技术
- 专利标题： Processing techniques for achieving production-worthy, low dielectric, low dielectric, low interconnect resistance and high performance IC
- 专利标题（中）： 用于实现生产有价值，低电介质，低电介质，低互连电阻和高性能IC的加工技术
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申请号： US463448申请日： 1995-06-05
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公开(公告)号： US5679608A公开(公告)日： 1997-10-21
- 发明人: Robin W. Cheung , Mark S. Chang
- 申请人： Robin W. Cheung , Mark S. Chang
- 申请人地址： CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.
- 当前专利权人： Advanced Micro Devices, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/027 ; H01L21/768 ; H01L23/532 ; H01L21/44
摘要：
The interconnects in a semiconductor device contacting metal lines includes a low resistance metal, such as copper, gold, silver, or platinum, and are separated by a material having a low dielectric constant, such as benzocyclobutene or a derivative thereof. A tri-layer resist structure is used, together with a lift-off process, to form the interconnects. The low dielectric constant material provides a diffusion barrier to the diffusion of the low resistance metal. The tri-layer resist includes a first layer of a dissolvable polymer, a second layer of a hard mask material, and a third layer of a resist material. The resulting structure provides an integrated circuit with increased speed and ease of fabrication.
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