发明授权
US5680007A Photomultiplier having a photocathode comprised of a compound
semiconductor material
失效
具有由化合物半导体材料构成的光电阴极的光电倍增管
- 专利标题: Photomultiplier having a photocathode comprised of a compound semiconductor material
- 专利标题(中): 具有由化合物半导体材料构成的光电阴极的光电倍增管
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申请号: US507985申请日: 1995-07-27
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公开(公告)号: US5680007A公开(公告)日: 1997-10-21
- 发明人: Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
- 申请人: Minoru Niigaki , Toru Hirohata , Tomoko Suzuki , Masami Yamada
- 申请人地址: JPX Hamamatsu
- 专利权人: Hamamatsu Photonics K.K.
- 当前专利权人: Hamamatsu Photonics K.K.
- 当前专利权人地址: JPX Hamamatsu
- 优先权: JPX6-318182 19941221
- 主分类号: H01J1/34
- IPC分类号: H01J1/34 ; H01J43/08
摘要:
A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
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