Electron tube, electron tube module, and optical device

    公开(公告)号:US12248159B2

    公开(公告)日:2025-03-11

    申请号:US18009067

    申请日:2021-04-12

    Abstract: The electron tube includes a vacuum container having a light transmitting substrate, a photocathode provided on an inner surface of the light transmitting substrate, an anode provided in the vacuum container, and a prism. The prism includes a bottom surface bonded to an outer surface of the light transmitting substrate, a light incident surface, and a light reflecting surface configured to further reflect light, which is incident to the photocathode through the prism and the light transmitting substrate and reflected at an interface between the photocathode and the vacuum space, so that the light is re-enter the photocathode. The light reflecting surface has an outwardly convex curved surface shape. The light incident surface is located inward of an imaginary spherical surface that is along the light reflecting surface.

    APPARATUS AND METHOD FOR A VISION SYSTEM HAVING A BORDERLESS CHIP DESIGN

    公开(公告)号:US20230134188A1

    公开(公告)日:2023-05-04

    申请号:US17514917

    申请日:2021-10-29

    Abstract: An apparatus and method are provided for a night vision system including a transparent overlay display that transmit direct-view light representing an intensified image and emits display light representing a display image. The transparent overlay display is a borderless display in which the active area extends to at least one edge of the display. Data-handling circuitry is arranged within the active area, rather than being arranged along a border of the display. The data-handling circuitry may be fabricated in the active area of the display by fabricating it below opaque pixel regions that generate the display light. This borderless configuration allows partial overlap with the intensified image by eliminating opaque borders in which the data-handling circuitry is fabricated. This borderless configuration helps to minimize size, weight, and power by reducing the size of the display and eliminating the need for bulky beam splitters.

    SYSTEM AND METHOD FOR PHOTOMULTIPLIER TUBE IMAGE CORRECTION

    公开(公告)号:US20210104388A1

    公开(公告)日:2021-04-08

    申请号:US17031327

    申请日:2020-09-24

    Inventor: Derek Mackay

    Abstract: A photomultiplier tube (PMT) detector assembly includes a PMT and an analog PMT detector circuit. The PMT includes a photocathode configured to emit an initial set of photoelectrons in response to an absorption of photons. The PMT includes a dynode chain with a plurality of dynodes. The dynode chain is configured to receive the initial set of photoelectrons, generate at least one amplified set of photoelectrons, and direct the at least one amplified set of photoelectrons. The PMT includes an anode configured to receive the at least one amplified set of photoelectrons, with a digitized image being generated based on a measurement of the final amplified set of photoelectrons. The digitized image is corrected by applying an output of the signal measured by the analog PMT detector circuit to the digitized image.

    Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
    5.
    发明授权
    Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor 有权
    光电倍增管,图像传感器和使用PMT或图像传感器的检测系统

    公开(公告)号:US09478402B2

    公开(公告)日:2016-10-25

    申请号:US14198175

    申请日:2014-03-05

    CPC classification number: H01J40/06 H01J43/08 H01L31/02161 H01L31/103

    Abstract: A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped semiconductor layer formed on a first surface of the p-doped semiconductor layer to form a diode, and a pure boron layer formed on a second surface of the p-doped semiconductor layer. A gap between the semiconductor photocathode and the photodiode may be less than about 1 mm or less than about 500 μm. The semiconductor photocathode may include gallium nitride, e.g. one or more p-doped gallium nitride layers. In other embodiments, the semiconductor photocathode may include silicon. This semiconductor photocathode can further include a pure boron coating on at least one surface.

    Abstract translation: 光电倍增管包括半导体光电阴极和光电二极管。 值得注意的是,光电二极管包括p掺杂半导体层,形成在p掺杂半导体层的第一表面上以形成二极管的n掺杂半导体层,以及在p掺杂的第二表面上形成的纯硼层 半导体层。 半导体光电阴极和光电二极管之间的间隙可以小于约1mm或小于约500μm。 半导体光电阴极可以包括例如氮化镓。 一个或多个p掺杂氮化镓层。 在其他实施例中,半导体光电阴极可以包括硅。 该半导体光电阴极还可以在至少一个表面上包括纯硼涂层。

    PHOTOCATHODE, ELECTRON TUBE, AND PHOTOMULTIPLIER TUBE
    6.
    发明申请
    PHOTOCATHODE, ELECTRON TUBE, AND PHOTOMULTIPLIER TUBE 有权
    光电管,电子管和光电管

    公开(公告)号:US20100253218A1

    公开(公告)日:2010-10-07

    申请号:US12752678

    申请日:2010-04-01

    CPC classification number: H01J1/34 H01J31/50 H01J31/506 H01J40/06

    Abstract: In the photocathode, an underlayer made of a crystalline material containing La2O3 is provided between a supporting substrate and a photoelectron emission layer, and is in contact with the photoelectron emission layer. Therefore, for example, at the time of heat treatment in a manufacturing process of the photocathode, dispersion to the supporting substrate side of an alkali metal contained in the photoelectron emission layer is suppressed. Further, it is assumed that this underlayer functions so as to reverse the direction of, out of photoelectrons e— generated within the photoelectron emission layer, photoelectrons traveling toward the supporting substrate side to the side opposite thereto.

    Abstract translation: 在光电阴极中,在支撑基板和光电子发射层之间设置由含有La 2 O 3的结晶材料制成的底层,并与光电子发射层接触。 因此,例如,在光电阴极的制造工序中进行热处理时,抑制光电子发射层中含有的碱金属的支持基板侧的分散。 此外,假设该底层起到使光电子发射层内产生的光电子的方向与向支撑基板一侧向相反侧移动的光电子的方向相反的作用。

    Gating large area hybrid photomultiplier tube
    7.
    发明申请
    Gating large area hybrid photomultiplier tube 失效
    门极大面积混合光电倍增管

    公开(公告)号:US20080265768A1

    公开(公告)日:2008-10-30

    申请号:US11801770

    申请日:2007-04-26

    CPC classification number: H01J43/04

    Abstract: A gating large area hybrid photomultiplier tube that includes an envelope, a photocathode for emitting electrons in correspondence with incident light entering the envelope, a collecting anode having a semiconductor device which has an electron incident surface for receiving photoelectrons emitted from the photocathode, a gating grid for gating the photoelectrons emitted from the photocathode, an electron optical system for focusing and directing the photoelectrons generated by the photocathode toward the electron incident surface, and an ion target for collecting positive ions from the photoelectrons. The envelope has a first opening and a second opening; the photocathode is disposed at the first opening, while the collecting anode is disposed at the second opening of the envelope.

    Abstract translation: 一种门控大面积混合光电倍增管,其包括一个外壳,一个用于发射电子的光电阴极对应于入射到外壳的入射光;一个收集阳极,具有一个半导体器件,该半导体器件具有一个用于接收从光电阴极发出的光电子的入射表面, 用于门控从光电阴极发射的光电子,用于将由光电阴极产生的光电子聚焦并引导到电子入射表面的电子光学系统和用于从光电子中收集正离子的离子靶。 信封具有第一开口和第二开口; 光电阴极设置在第一开口处,而集电阳极设置在信封的第二开口处。

    Photomultiplier having a photocathode comprised of a compound
semiconductor material
    8.
    发明授权
    Photomultiplier having a photocathode comprised of a compound semiconductor material 失效
    具有由化合物半导体材料构成的光电阴极的光电倍增管

    公开(公告)号:US5680007A

    公开(公告)日:1997-10-21

    申请号:US507985

    申请日:1995-07-27

    CPC classification number: H01J1/34 H01J43/08 H01J2201/3423

    Abstract: A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transitioned, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.

    Abstract translation: 提供了具有优异的光电转换特性的稳定性和再现性并且具有能够获得高光敏性的结构的光电发射表面。 通过电池在上表面电极和下表面电极之间施加预定的电压。 在施加该电压时,形成在接触层和电子发射层之间的p-n结被反向偏置。 耗尽层从p-n结延伸到光电发射表面,并且在电子发射层和在光子电子加速方向上的光吸收层形成电场。 当入射光吸收在光吸收层中以激发光电子时,光电子通过电场被加速到发射表面。 光电子在该电场加速度下获得能量,并且在电子发射层中被转变到更高能量级的导带,并且发射到真空中。

    Photomultiplier tube comprising a multiplier with stacked dynodes inside
a truncated cone
    9.
    发明授权
    Photomultiplier tube comprising a multiplier with stacked dynodes inside a truncated cone 失效
    包含在一个截锥体内部的带有堆积的DYN的一个乘法器的光电管

    公开(公告)号:US5126551A

    公开(公告)日:1992-06-30

    申请号:US603972

    申请日:1990-10-23

    Inventor: Pierre L'Hermite

    CPC classification number: H01J43/06

    Abstract: A photomultiplier tube comprises a photocathode (10) deposited on an input window (20) sealed to one end of a sleeve (30), an input electrode (40), and an electron multiplier (50) with stacked dynodes. The input electrode (40) is constituted by a truncated cone conductor on the inside of which the electron multiplier (50) with stacked dynodes is deposited. A generator (61,62) of a material forming the photocathode (10) is advantageously placed in the space (70) situated between the input electrode (40) and the sleeve (30).

    Abstract translation: 光电倍增管包括沉积在密封到套筒(30)一端的输入窗(20)上的光电阴极(10),输入电极(40)和具有堆叠倍增电极的电子倍增器(50)。 输入电极(40)由其内部具有堆叠的倍增电极的电子倍增器(50)沉积的截头锥体导体构成。 形成光电阴极(10)的材料的发生器(61,62)有利地放置在位于输入电极(40)和套筒(30)之间的空间(70)中。

    Segmented photomultiplier tube
    10.
    发明授权
    Segmented photomultiplier tube 失效
    分段光电倍增管

    公开(公告)号:US4816718A

    公开(公告)日:1989-03-28

    申请号:US103994

    申请日:1987-10-01

    CPC classification number: H01J43/06

    Abstract: Photomultiplier tube 10 segmented into a plurality of elementary photomultipliers 11 comprising a photocathode 12 and a multiplier 13 of the type using sheets partitioned into a plurality of elementary multipliers 14. According to the invention the input space of the tube 10 located between the photocathode 12 and the multiplier 13 is partitioned into elementary input spaces 15 associated with the elementary photomultipliers and defining a plurality of elementary photocathodes 16, with each elementary input space 15 having a focussing electrode which causes the photo-electrons emitted by the associated elementary photocathode 16 to converge on the corresponding elementary multiplier 14.

    Abstract translation: 光电倍增管10分割成多个基本光电倍增管11,其包括光电阴极12和使用分成多个基本倍增器14的片材的乘法器13.根据本发明,管10的输入空间位于光电阴极12和 乘法器13被划分为与基本光电倍增管相关联的基本输入空间15,并且限定多个基本光电阴极16,其中每个基本输入空间15具有聚焦电极,该聚焦电极使由相关基本光电阴极16发射的光电子会聚在 相应的基本乘法器14。

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