发明授权
- 专利标题： Method of manufacturing a bismuth-substituted rare earth iron garnet single crystal film for short wavelength
- 专利标题（中）： 短波长铋取代稀土铁石榴石单晶膜的制造方法
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申请号： US664416申请日： 1996-06-17
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公开(公告)号： US5683506A公开(公告)日： 1997-11-04
- 发明人: Kazushi Shirai , Norio Takeda
- 申请人： Kazushi Shirai , Norio Takeda
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Gas Chemical Company, Inc.
- 当前专利权人： Mitsubishi Gas Chemical Company, Inc.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-150305 19950616
- 主分类号： G02F1/09
- IPC分类号： G02F1/09 ; C30B19/02 ; C30B19/10 ; C30B29/28 ; C30B33/00 ; G02B27/28 ; C30B19/04
摘要：
A method of manufacturing a bismuth-substituted rare-earth iron garnet single crystal film used for short wavelengths, includes the steps of: manufacturing a BIG-grown substrate in an LPE furnace by the LPE method, the BIG-grown substrate having a bismuth-substituted rare-earth iron garnet single crystal film grown on one surface of a non-magnetic garnet single crystal substrate, the film having a thickness in the range of 20-100 .mu.m; spinning the BIG-grown substrate at a high speed to remove a melt adhering thereto prior to taking the BIG-grown substrate out of the LPE furnace; and cooling the BIG-grown substrate to 300.degree. C. within one minute.
公开/授权文献
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