公开(公告)号：US11473212B2

公开(公告)日：2022-10-18

申请号：US15991317

申请日：2018-05-29

申请人： NGK INSULATORS, LTD.

发明人： Makoto Iwai ,  Takashi Yoshino

IPC分类号： H01L33/32 ,  C30B29/38 ,  C30B25/18 ,  H01L21/02 ,  C30B19/12 ,  C30B19/02 ,  H01L21/205 ,  H01L21/208 ,  C30B29/40 ,  H01L33/00

摘要： A crystal substrate 1 includes an underlying layer 2 and a thick film 3. The underlying layer 2 is composed of a crystal of a nitride of a group 13 element and includes a first main face 2a and a second main face 2b. The thick film 3 is composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layer 2 includes a low carrier concentration region 5 and a high carrier concentration region 4 both extending between the first main face 2a and the second main face 2b.

公开(公告)号：US20210115591A1

公开(公告)日：2021-04-22

申请号：US17081341

申请日：2020-10-27

申请人： ELEMENT SIX TECHNOLOGIES LIMITED

发明人： HERMAN PHILIP GODFRIED ,  GEOFFREY ALAN SCARSBROOK ,  DANIEL JAMES TWITCHEN ,  EVERT PIETER HOUWMAN ,  WILHELMUS GERTRUDA MARIA NELISSEN ,  ANDREW JOHN WHITEHEAD ,  CLIVE EDWARD HALL ,  PHILIP MAURICE MARTINEAU

IPC分类号： C30B29/04 ,  C30B25/20 ,  C30B33/02 ,  C01B32/25 ,  C01B32/26 ,  C30B25/02 ,  G02B1/00 ,  C30B9/00 ,  C30B19/02 ,  C30B25/16 ,  C30B33/12 ,  G02B1/02

摘要： A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

公开(公告)号：US10707373B2

公开(公告)日：2020-07-07

申请号：US16059250

申请日：2018-08-09

申请人： NGK INSULATORS, LTD.

发明人： Morimichi Watanabe ,  Kei Sato ,  Yoshitaka Kuraoka ,  Katsuhiro Imai ,  Tsutomu Nanataki

IPC分类号： H01L33/18 ,  C30B9/12 ,  C30B29/40 ,  H01L33/32 ,  H01L31/0392 ,  C30B28/04 ,  C30B19/12 ,  C30B29/60 ,  C30B19/02 ,  H01L33/36

摘要： There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1° or more and less than 1° and the cross-sectional average diameter DT of the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 μm or more.

公开(公告)号：US10693032B2

公开(公告)日：2020-06-23

申请号：US15713967

申请日：2017-09-25

申请人： TOYODA GOSEI CO., LTD.

发明人： Miki Moriyama ,  Shiro Yamazaki ,  Shohei Kumegawa

IPC分类号： C30B19/02 ,  H01L31/18 ,  C30B29/40 ,  C30B9/12 ,  C30B19/12 ,  C30B25/02 ,  C30B9/10 ,  C30B19/00 ,  C30B9/06 ,  C30B25/18

摘要： The seed substrate comprises a base substrate and a base layer comprising a Group III nitride semiconductor formed on the base substrate, which has a high dislocation density region and a low dislocation density region. The planar pattern of the high dislocation density region is a honeycomb pattern. A hollow exists between the base substrate and the low dislocation density region. The object layer is grown through a flux method using the seed substrate. The high dislocation density region is melted back at an initial stage of crystal growth, and thereafter, the object layer is grown on the top surface of the low dislocation density region. A cavity remains between the high dislocation density region and the object layer. The presence of the cavity and the hollow makes easy to peel the object layer from the seed substrate.

公开(公告)号：US10580646B2

公开(公告)日：2020-03-03

申请号：US15965210

申请日：2018-04-27

申请人： NGK INSULATORS, LTD.

发明人： Mikiya Ichimura ,  Sota Maehara ,  Yoshitaka Kuraoka

IPC分类号： H01L21/02 ,  H01L29/20 ,  C23C16/30 ,  H01L29/201 ,  H01L29/778 ,  C23C16/34 ,  H01L21/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/812 ,  C30B19/02 ,  C30B29/40 ,  H01L29/205 ,  H01L29/207

摘要： An epitaxial substrate for semiconductor elements is provided which suppresses the occurrence of current collapse. The epitaxial substrate for the semiconductor elements includes: a semi-insulating free-standing substrate formed of GaN doped with Zn; a buffer layer adjacent to the free-standing substrate; a channel layer adjacent to the buffer layer; and a barrier layer provided on an opposite side of the buffer layer with the channel layer therebetween, wherein the buffer layer is a diffusion suppressing layer formed of AlpGa1-pN (0.7≤p≤1) and suppresses diffusion of Zn from the free-standing substrate into the channel layer.

公开(公告)号：US10450671B2

公开(公告)日：2019-10-22

申请号：US15023981

申请日：2014-08-27

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA ,  NIPPON STEEL & SUMITOMO METAL CORPORATION

发明人： Hironori Daikoku ,  Motohisa Kado ,  Kazuhito Kamei ,  Kazuhiko Kusunoki

IPC分类号： C30B19/10 ,  C30B29/36 ,  C30B9/10 ,  C30B19/02 ,  C30B19/06 ,  C30B19/12 ,  H01L21/02 ,  H01L29/04 ,  H01L29/16 ,  C30B19/08

摘要： Provided is a SiC single crystal that has a large growth thickness and contains no inclusions. A SiC single crystal grown by a solution process, wherein the total length M of the outer peripheral section formed by the {1-100} faces on the {0001} growth surface of the SiC single crystal, and the length P of the outer periphery of the growth surface of the SiC single crystal, satisfy the relationship M/P≤0.70, and the length in the growth direction of the SiC single crystal is 2 mm or greater.

公开(公告)号：US10192738B2

公开(公告)日：2019-01-29

申请号：US15699122

申请日：2017-09-08

申请人： NGK INSULATORS, LTD.

发明人： Masahiro Sakai ,  Takashi Yoshino

IPC分类号： H01L21/02 ,  C30B19/12 ,  C30B1/02 ,  C30B29/40 ,  C30B33/08 ,  C30B19/02 ,  C30B33/06

摘要： A seed crystal layer is provided on a supporting body. A laser light is irradiated from a side of the supporting body to provide an altered portion along an interface between the supporting body and seed crystal layer. The altered layer is composed of a nitride of a group 13 element and has a portion into which dislocation defects are introduced or an amorphous portion.

公开(公告)号：US20180202067A1

公开(公告)日：2018-07-19

申请号：US15920905

申请日：2018-03-14

申请人： NGK INSULATORS, LTD.

发明人： Takayuki HIRAO ,  Makoto IWAI ,  Katsuhiro IMAI ,  Takashi YOSHINO

IPC分类号： C30B19/12 ,  H01L21/02 ,  C30B19/02 ,  C30B29/40 ,  C30B25/18 ,  C30B33/12

CPC分类号： C30B19/12 ,  C30B9/10 ,  C30B19/02 ,  C30B25/18 ,  C30B29/406 ,  C30B33/12 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634

摘要： An underlying substrate including a seed crystal layer of a group 13 nitride, wherein projections and recesses repeatedly appear in stripe shapes at a principal surface of the seed crystal layer, and the projections have a level difference of 0.3 to 40 μm and a width of 5 to 100 μm, and the recesses have a bottom thickness of 2 μm or more and a width of 50 to 500 μm.

公开(公告)号：US20180195202A1

公开(公告)日：2018-07-12

申请号：US15530412

申请日：2017-01-10

申请人： Daniel Smith

发明人： Daniel Smith

IPC分类号： C30B19/12 ,  C30B19/08 ,  C30B7/10 ,  C30B19/02 ,  C30B25/18 ,  C30B29/18 ,  C30B29/14 ,  C30B29/22 ,  H01L41/113

CPC分类号： C30B19/12 ,  C30B7/10 ,  C30B19/02 ,  C30B19/08 ,  C30B23/02 ,  C30B25/18 ,  C30B29/14 ,  C30B29/18 ,  C30B29/22 ,  H01L41/187 ,  H01L41/1875 ,  H01L41/316 ,  H01L41/317

摘要： The purpose of quartz homeotypes grown epitaxially on beta quartz for use in pressure sensors or accelerometers is to be able to drastically cut down production costs on otherwise expensive or time-consuming to grow crystals that are necessary in various industrial applications. This is done via epitaxial growth of quartz homeotypes across the whole surface of a sample of beta quartz, an easily accessible and high temperature capable crystal. This invention also applies to the epitaxial application of piezoelectric material atop a piezoelectric crystal for the purpose of altering its piezoelectric coefficient and the epitaxial application of a piezoelectric crystal atop a host crystal for the purpose of increasing its insulation resistance.

公开(公告)号：US20180179665A1

公开(公告)日：2018-06-28

申请号：US15902294

申请日：2018-02-22

申请人： NGK INSULATORS, LTD.

发明人： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Tsutomu NANATAKI

IPC分类号： C30B29/20 ,  H01L33/00 ,  H01L21/02 ,  H01L21/683 ,  C30B25/18 ,  C30B19/02 ,  C01F7/02

CPC分类号： C30B29/20 ,  C01F7/02 ,  C01P2002/54 ,  C04B35/111 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/728 ,  C04B2235/786 ,  C04B2235/787 ,  C30B1/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/183 ,  C30B28/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/6835 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2221/68345 ,  H01L2221/6835

摘要： An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.