发明授权
- 专利标题: Trench capacitor precharge structure and leakage shield
- 专利标题(中): 沟槽电容器预充电结构和漏电屏蔽
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申请号: US617138申请日: 1996-03-18
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公开(公告)号: US5684314A公开(公告)日: 1997-11-04
- 发明人: Donald M. Kenney
- 申请人: Donald M. Kenney
- 专利权人: Kenney; Donald M.
- 当前专利权人: Kenney; Donald M.
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/94
摘要:
An integrated structure is provided that includes a DRAM cell with a trench storage capacitor, and a corresponding storage node precharge circuit. The entire structure ideally requires only eight square features of area per memory bit. The structure also provides a partial leakage current shield for the DRAM storage node diffusion, thereby improving the data hold time. A graded impurity region around the storage node diffusion enhances the leakage shielding effect. The structure can be operated independently as a DRAM leakage shield if the precharge circuit is not needed. In that case, a junction diffusion in the structure can be eliminated and a leakage shielding effect is still achieved.
公开/授权文献
- US5072947A Racquet game with air ball thereof 公开/授权日:1991-12-17