发明授权
US5687111A Static type semiconductor memory device capable of operating at a low
voltage and reducing a memory cell area
失效
静态型半导体存储器件能够以低电压工作并减少存储单元面积
- 专利标题： Static type semiconductor memory device capable of operating at a low voltage and reducing a memory cell area
- 专利标题（中）： 静态型半导体存储器件能够以低电压工作并减少存储单元面积
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申请号： US609313申请日： 1996-03-01
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公开(公告)号： US5687111A公开(公告)日： 1997-11-11
- 发明人: Tomohisa Wada , Kunihiko Kozaru , Toru Shiomi
- 申请人： Tomohisa Wada , Kunihiko Kozaru , Toru Shiomi
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-178880 19950714
- 主分类号： G11C11/411
- IPC分类号： G11C11/411 ; G11C11/41 ; G11C11/412 ; G11C14/00 ; H01L21/8244 ; H01L27/11 ; G11C11/00 ; H01L27/02
摘要：
A pair of driving bipolar transistors of a lateral type T1 and T2 have emitters coupled to a ground potential, collectors connected to a pair of highly resistive elements R1 and R2. Highly resistive elements R1 and R2 have respective other ends coupled to power supply potential V.sub.CC, and bases and collectors of transistors T1 and T2 are cross-connected to each other, thereby forming a flipflop circuit. Access MOS transistors Q3 and Q4 having a gate potential controlled by word line WL are each connected to form a conduction path between one of storage nodes A and B and one of the pair of bit lines BL and /BL.
公开/授权文献
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