发明授权
US5688366A Etching method, method of producing a semiconductor device, and etchant
therefor
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蚀刻方法，制造半导体器件的方法和蚀刻剂
- 专利标题： Etching method, method of producing a semiconductor device, and etchant therefor
- 专利标题（中）： 蚀刻方法，制造半导体器件的方法和蚀刻剂
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申请号： US429039申请日： 1995-04-26
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公开(公告)号： US5688366A公开(公告)日： 1997-11-18
- 发明人: Hirofumi Ichinose , Satoshi Shinkura , Akio Hasebe , Tsutomu Murakami
- 申请人： Hirofumi Ichinose , Satoshi Shinkura , Akio Hasebe , Tsutomu Murakami
- 申请人地址： JPX Tokyo
- 专利权人： Canon Kabushiki Kaisha
- 当前专利权人： Canon Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-092756 19940428
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; H01L21/321 ; C23F1/10
摘要：
A method of etching material as a transparent conductive film, a method of producing a semiconductor device, and an etchant therefor are disclosed. These method and etchant are simple, excellent in etching selectivity, and stable for a long time. The methods include the steps of disposing paste on material wherein the paste includes an etching solution and at least one kind of fine particles. A method of producing a semiconductor device, including the above-described etching steps is also disclosed.
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