发明授权
US5693178A Electrical test structure to quantify microloading after plasma dry
etching of metal film
失效
金属膜等离子体干法蚀刻后的电化学测试结构来量化微载荷
- 专利标题： Electrical test structure to quantify microloading after plasma dry etching of metal film
- 专利标题（中）： 金属膜等离子体干法蚀刻后的电化学测试结构来量化微载荷
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申请号： US559050申请日： 1996-01-18
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公开(公告)号： US5693178A公开(公告)日： 1997-12-02
- 发明人: Lap Chan , Simon Chooi
- 申请人： Lap Chan , Simon Chooi
- 申请人地址： SGX Singapore
- 专利权人： Chartered Semiconductor Manufacturing Pte Ltd.
- 当前专利权人： Chartered Semiconductor Manufacturing Pte Ltd.
- 当前专利权人地址： SGX Singapore
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; H01L21/00
摘要：
A microloading quantification apparatus is comprising a supporting substrate, a first bonding pad deposited upon the supporting substrate, a second bonding pad deposited upon the supporting substrate, and an etched conductive pattern deposited upon the supporting substrate and operably connected to the first bonding pad and the second bonding pad. Methods for the formation and application of the microloading quantification apparatus to quantify the variation of the microloading effect as a result of modifications of the set of parameters of integrated circuit processing particularly those of the plasma dry etch are described.
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