Invention Grant
- Patent Title: Reverse damascene via structures
- Patent Title (中): 通过结构反向镶嵌
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Application No.: US572317Application Date: 1995-12-14
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Publication No.: US5693568APublication Date: 1997-12-02
- Inventor: Yowjuang W. Liu , Kuang-Yeh Chang
- Applicant: Yowjuang W. Liu , Kuang-Yeh Chang
- Applicant Address: CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: CA Sunnyvale
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/44
Abstract:
A reliable interconnection pattern is formed by depositing first and second conductive layers, etching to form a conductive pattern in the first conductive layer and etching to form an interconnection comprising a portion of the second conductive layer. Advantageously, the need to form openings in dielectric layers, and filling them with barrier materials and plugs, is avoided along with their attendant disadvantages. The resulting semiconductor device exhibits improved reliability, higher operating speeds and an improved signal-to-noise ratio.
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