发明授权
US5693578A Method of forming thin silicon oxide film with high dielectric breakdown
and hot carrier resistance
失效
形成具有高介电击穿和耐热载流子的薄氧化硅薄膜的方法
- 专利标题： Method of forming thin silicon oxide film with high dielectric breakdown and hot carrier resistance
- 专利标题（中）： 形成具有高介电击穿和耐热载流子的薄氧化硅薄膜的方法
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申请号： US606681申请日： 1996-02-26
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公开(公告)号： US5693578A公开(公告)日： 1997-12-02
- 发明人: Toshiro Nakanishi , Yasuhisa Sato , Masaki Okuno
- 申请人： Toshiro Nakanishi , Yasuhisa Sato , Masaki Okuno
- 申请人地址： JPX Kawasaki
- 专利权人： Fujitsu, Ltd.
- 当前专利权人： Fujitsu, Ltd.
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX5-231944 19930917
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/306 ; H01L29/78 ; H01L21/02
摘要：
A method of forming a silicon oxide film by setting a silicon wafer in a chamber capable of introducing oxidizing gas and being evacuated and by heating the silicon wafer in an oxidizing atmosphere. The method includes the steps of: transporting the silicon wafer into the chamber without contacting the silicon wafer with air; introducing an ozone containing gas into the chamber and setting the interior of the chamber to a predetermined pressure; and heating the silicon wafer to a predetermined temperature and oxidizing the surface of the silicon wafer. The predetermined pressure is preferably between 200 Torr and 0.1 Torr. Ozone may be generated from oxygen by applying ultraviolet rays to the upper space of a silicon wafer. The temperature of ozone to be introduced is preferably low. It is preferable to incorporate infrared heating in order not to excessively heat ozone and to heat a silicon wafer to a high temperature.
公开/授权文献
- US5076092A Yieldable roller assembly for a die set in a stamping press 公开/授权日：1991-12-31
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