发明授权
- 专利标题： Dry etching method
- 专利标题（中）： 干蚀刻法
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申请号： US457748申请日： 1995-06-01
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公开(公告)号： US5705029A公开(公告)日： 1998-01-06
- 发明人: Sadayuki Okudaira , Kazunori Tsujimoto , Shinichi Tachi
- 申请人： Sadayuki Okudaira , Kazunori Tsujimoto , Shinichi Tachi
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX61-207832 19860905; JPX62-99739 19870424
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/3065 ; H01L21/3213 ; H01L21/00
摘要：
Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
公开/授权文献
- US4512232A Tremolo tailpiece and bridge device 公开/授权日：1985-04-23
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