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公开(公告)号：US4985114A
公开(公告)日：1991-01-15
申请号：US418223
申请日：1989-10-06
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/308 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32139 , H01L21/30655 , H01L21/3085 , H01L21/31144 , Y10S438/913
摘要： A dry etching method including the steps of introducing etching and deposition gases alternately into a reaction chamber at predetermined time intervals, etching the exposed surface of an article to be etched and applying deposition to the surface film thereof alternately by making plasma generated by applying power to the etching and deposition gases introduced into the reaction chamber come in contact with the article to be etched in the reaction chamber in order to etch the surface, is characterized in that the power is applied after the passage of predetermined time from the start of the introduction of the deposition gas and before the etching gas is introduced and cut off when the introduction of the etching gas is suspended.
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公开(公告)号：US5705029A
公开(公告)日：1998-01-06
申请号：US457748
申请日：1995-06-01
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/3065 , H01L21/32135 , H01L21/32136 , H01L21/32137
摘要： Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
摘要翻译： 通过将制品保持在蚀刻气体分子的蒸气压变得等于或高于蚀刻气体的压力并且等离子体中包含的中性基团的蒸气压变为等于或等于其的温度来进行制品的蚀刻 比蚀刻气体的压力高。 可以以高精度形成具有基本上垂直的侧面轮廓并且从掩模的尺寸偏移极小的蚀刻图案。
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公开(公告)号：US4992136A
公开(公告)日：1991-02-12
申请号：US223570
申请日：1988-07-25
IPC分类号： H01L21/302 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32135 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： An article to be etched is contacted with a plasma of a mixed gas containing an etching gas and a film forming gas or a surface modification gas at a low temperature to effect the dry etching of the article, whereby the selectivity of etching can be made very high and the inclination angle of the side wall of pattern can be controlled at a desired level.
摘要翻译： 待蚀刻的制品在低温下与含有蚀刻气体和成膜气体或表面改性气体的混合气体的等离子体接触以实现制品的干蚀刻，从而可以非常地进行蚀刻的选择性 可以将图案的侧壁的倾斜角度控制在期望的水平。
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公开(公告)号：US4857137A
公开(公告)日：1989-08-15
申请号：US9784
申请日：1987-02-02
IPC分类号： C23C14/22 , H01J37/02 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/316 , H01L21/3213
CPC分类号： H01L21/02019 , C23C14/221 , H01J37/026 , H01L21/02164 , H01L21/02263 , H01L21/02266 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/31608 , H01L21/32136
摘要： An ion beam is allowed to hit the surface of a target and the resulting forward scattered particle beam is then allowed to hit the surface of a workpiece, thereby etching or modifying the surface of the workpiece or depositing a film on the surface of the workpiece. By bombardment of ions with the target, electric charges possessed by the ion beam are lost, and only the thus neutralized forward scattered particle beam is allowed to hit the surface of the workpiece, and thus the said surface treatment can be carried out without any electrically charging trouble.
摘要翻译： 允许离子束撞击靶的表面，然后使得到的前向散射的粒子束撞击工件的表面，从而蚀刻或改变工件的表面或在工件的表面上沉积膜。 通过用目标轰击离子，离子束所具有的电荷损失，只有这样被中和的前向散射的粒子束能够撞击到工件的表面，因此所述表面处理可以在没有任何电 充电麻烦
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公开(公告)号：US5643473A
公开(公告)日：1997-07-01
申请号：US453336
申请日：1995-05-30
IPC分类号： H01L21/311 , H01L21/3213 , H05H1/00 , H01L21/00
CPC分类号： H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.
摘要翻译： 公开了一种干蚀刻方法，其中设置反应室中的蚀刻气体的压力，施加到待蚀刻的制品的偏压和被蚀刻物体的温度，使得制品的蚀刻速率 被蚀刻的厚度大于0.2μm/ min，待蚀刻制品中的侧蚀刻长度与蚀刻深度的比值小于+ E，fra 1/100 + EE，蚀刻比 要蚀刻的制品的速率对于其上形成的掩模的蚀刻速率大于10.因此，干蚀刻方法可以满足三个要求（即蚀刻速率高，选择率高，蚀刻中具有显着的各向异性） 同时，尽管传统的干蚀刻方法只能满足三个要求中的两个。
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公开(公告)号：US5354416A
公开(公告)日：1994-10-11
申请号：US503124
申请日：1990-04-02
IPC分类号： H01L21/3065 , H01L21/3213 , H05H1/00
CPC分类号： H01L21/32135 , H01L21/3065 , H01L21/32136 , H01L21/32137
摘要： Etching of an article is carried out by maintaining the article at a temperature at which the vapor pressure of etching gas molecules becomes equal to or higher than the pressure of etching gas and the vapor pressure of neutral radicals contained in a plasma becomes equal to or lower than the pressure of an etching gas. An etching pattern with a substantially vertical side profile and extremely small in dimensional shift from the mask can be formed at high precision.
摘要翻译： 通过将制品保持在蚀刻气体分子的蒸气压变得等于或高于蚀刻气体的压力并且等离子体中包含的中性基团的蒸气压变为等于或等于其的温度来进行制品的蚀刻 比蚀刻气体的压力高。 可以以高精度形成具有基本上垂直的侧面轮廓并且从掩模的尺寸偏移极小的蚀刻图案。
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公开(公告)号：US5147500A
公开(公告)日：1992-09-15
申请号：US598808
申请日：1990-10-10
IPC分类号： C23F4/00 , H01L21/306 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： C23F4/00 , H01L21/30621 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137
摘要： A dry etching method is disclosed, in which the pressure of etching gas in a reaction chamber, the bias voltage applied to article to be etched, and the temperature of the article to be etched object are set so that the etching rate for the article to be etched is greater than 0.2 .mu.m/min, a ratio of the length of side etching in the article to be etched to the depth of etching therein is less than 1/100, and a ratio of the etching rate for the article to be etched to the etching rate for a mask formed thereon is greater than 10. Thus, the dry etching method can satisfy three requirements (that is, a high etching rate, a high selection ratio and marked anisotropy in etching) at the same time, although conventional dry etching methods can satisfy only two of three requirements.
摘要翻译： 公开了一种干蚀刻方法，其中设置反应室中的蚀刻气体的压力，施加到待蚀刻的制品的偏压和被蚀刻物体的温度，使得制品的蚀刻速率 被蚀刻的厚度大于0.2μm/ min，待蚀刻制品中的侧蚀刻长度与蚀刻深度之比小于1/100，制品的蚀刻速率比为 蚀刻到其上形成的掩模的蚀刻速率大于10.因此，干蚀刻方法可以同时满足三个要求（即蚀刻速率高，蚀刻中的高选择率和显着的各向异性），尽管 常规的干蚀刻方法只能满足三个要求中的两个。
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公开(公告)号：US4986877A
公开(公告)日：1991-01-22
申请号：US223642
申请日：1988-07-25
IPC分类号： H01L21/3205 , H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/32137 , H01L21/31116 , H01L21/32136
摘要： A first etching for large side etching is conducted while maintaining the temperature of an article to be etched at a first temperature, and a second etching for small side etching is then conducted while maintaining the article to be etched at a second temperature lower than the first temperature. This enables the formation of various patterns in which the upper part of the sidewall is inclined at an angle smaller than that of the lower part of the sidewall.
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公开(公告)号：US4943344A
公开(公告)日：1990-07-24
申请号：US362099
申请日：1989-06-06
IPC分类号： H01L21/302 , C23F4/00 , H01L21/3065
CPC分类号： H01L21/3065
摘要： A deep trench is formed by carrying out etching by using an etching gas free of carbon and silicon, which contains at least one member selected from the group consisting of fluorine, chlorine and bromine, while maintaining an article to be etched at such a temperature that the reaction probability between silicon and fluorine, chlorine or bromine contained in the etching gas is less than 1/10 of the reaction probability at 20.degree. C. According to this method, a deep trench having a very narrow width and a large aspect ratio, which cannot be formed according to the conventional method, can be formed very promptly with much reduced side etching.
摘要翻译： 通过使用不含碳和硅的蚀刻气体进行蚀刻而形成深沟槽，该蚀刻气体含有选自氟，氯和溴中的至少一种，同时保持要蚀刻的制品在如下温度 蚀刻气体中所含的硅与氟，氯或溴之间的反应概率小于20℃反应概率的1/10。根据该方法，具有非常窄的宽度和大的纵横比的深沟槽， 可以非常迅速地形成根据常规方法不能形成的侧面蚀刻。
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公开(公告)号：US06767782B2
公开(公告)日：2004-07-27
申请号：US10082311
申请日：2002-02-26
申请人： Takeshi Saikawa , Ryohei Maeno , Sadayuki Okudaira , Tetsuo Saito , Tsuyoshi Tamaru , Kazutoshi Ohmori
发明人： Takeshi Saikawa , Ryohei Maeno , Sadayuki Okudaira , Tetsuo Saito , Tsuyoshi Tamaru , Kazutoshi Ohmori
IPC分类号： H01L218238
CPC分类号： H01L21/76801 , H01L21/76819 , H01L21/76838 , H01L21/7684 , Y10S438/906
摘要： Charge-up damages to a substrate are reduced in a manufacturing process using plasma, and the reliability of a semiconductor device is improved. By forming an insulating film on the back of a substrate before a step of forming a first wiring layer, even if a plasma CVD method, a sputtering method, or a dry-etching method is used in a wiring-forming step executed later, then it is possible to suppress electric charges which are generated on the substrate and which flow to the ground potential through the substrate, and to prevent damages to the substrate due to charge-up.
摘要翻译： 在使用等离子体的制造工艺中，对基板的充电损坏减少，并且提高了半导体器件的可靠性。通过在形成第一布线层的步骤之前在基板背面形成绝缘膜，即使 在稍后执行的布线形成步骤中使用等离子体CVD法，溅射法或干蚀刻法，则可以抑制在基板上产生的电荷，并且通过基板流向接地电位， 并防止由于充电而损坏基板。
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