发明授权
- 专利标题: Input protection circuit and method for semiconductor memory device
- 专利标题(中): 半导体存储器件的输入保护电路及方法
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申请号: US632591申请日: 1996-04-15
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公开(公告)号: US5717354A公开(公告)日: 1998-02-10
- 发明人: Myung-Jae Kim , Do-Chan Choi
- 申请人: Myung-Jae Kim , Do-Chan Choi
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., LTD.
- 当前专利权人: Samsung Electronics Co., LTD.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX8686/1995 19950413
- 主分类号: G11C11/417
- IPC分类号: G11C11/417 ; G11C7/10 ; G11C11/34 ; G11C11/413 ; H03K5/08 ; H03K19/00
摘要:
An input protection circuit for a semiconductor memory device senses when the level of an external input signal drops below a reference voltage corresponding to a predetermined logic level, thereby enabling instant correction. The input protection circuit is interposed between an external power voltage terminal and an input terminal of the input buffer, and the external power voltage is transferred to the input terminal of the input buffer when the level of the external input signal applied to the input terminal drops below the predetermined logic level. The circuit includes an internal reference voltage generator which supplies a voltage having a level corresponding to the predetermined logic level and designed to compensate for a known device offset so that the external input signal applied to the input terminal can be instantly corrected.
公开/授权文献
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