发明授权
- 专利标题： Integrated circuit with layered superlattice material compound
- 专利标题（中）： 集成电路与层状超晶格材料复合
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申请号： US276805申请日： 1994-07-18
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公开(公告)号： US5719416A公开(公告)日： 1998-02-17
- 发明人: Hiroyuki Yoshimori , Hitoshi Watanabe , Carlos A. Paz De Araujo , Shuzo Hiraide , Takashi Mihara , Larry D. McMillan
- 申请人： Hiroyuki Yoshimori , Hitoshi Watanabe , Carlos A. Paz De Araujo , Shuzo Hiraide , Takashi Mihara , Larry D. McMillan
- 申请人地址： CO Colorado Springs JPX Tokyo
- 专利权人： Symetrix Corporation,Olympus Optical Co., Ltd.
- 当前专利权人： Symetrix Corporation,Olympus Optical Co., Ltd.
- 当前专利权人地址： CO Colorado Springs JPX Tokyo
- 主分类号： C23C18/12
- IPC分类号： C23C18/12 ; C30B7/00 ; H01L21/02 ; H01L21/314 ; H01L21/316 ; H01L27/108 ; H01L27/115
摘要：
A method of fabricating a ferroelectric or layered superlattice DRAM compatible with conventional silicon CMOS technology. A MOSFET is formed on a silicon substrate. A thick layer of BPSG followed by a thin SOG layer overlies the MOSFET. A capacitor is formed by depositing a layer of platinum, annealing, depositing an intermediate layer comprising a ferroelectric or layer superlattice material, annealing, depositing a second layer of platinum, then patterning the capacitor. Another SOG layer is deposited, contact holes to the MOSFET and capacitor are partially opened, the SOG is annealed, the contact holes are completely opened, and a Pt/Ti/PtSi wiring layer is deposited.
公开/授权文献
- US6061169A Integrated micro-optical systems 公开/授权日：2000-05-09