发明授权
- 专利标题: Capacitance sensor
- 专利标题(中): 电容传感器
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申请号: US595240申请日: 1996-02-01
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公开(公告)号: US5719740A公开(公告)日: 1998-02-17
- 发明人: Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
- 申请人: Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
- 申请人地址: JPX Osaka
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX Osaka
- 优先权: JPX5-306184 19931207; JPX5-306185 19931207
- 主分类号: G01D5/241
- IPC分类号: G01D5/241 ; G01L9/00 ; G01P15/125 ; H01G7/00 ; G01L9/12
摘要:
A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
公开/授权文献
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