发明授权
- 专利标题： Method for fabricating polycrystalline silicon having micro roughness on the surface
- 专利标题（中）： 制造表面微观粗糙度的多晶硅的方法
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申请号： US177995申请日： 1994-01-06
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公开(公告)号： US5723379A公开(公告)日： 1998-03-03
- 发明人: Hirohito Watanabe , Toru Tatsumi
- 申请人： Hirohito Watanabe , Toru Tatsumi
- 申请人地址： JPX Tokyo
- 专利权人： NEC Corporation
- 当前专利权人： NEC Corporation
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX2-72462 19900320; JPX2-249154 19900919; JPX2-327069 19901128
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L27/108 ; H01L29/92 ; H01L21/205
摘要：
A method for fabricating a polycrystalline silicon having a roughed surface, which is useful for a capacitor electrode is disclosed. The method is featured by depositing a polycrystalline silicon layer in such a manner that grains of silicon are caused at the surface of the polycrystalline silicon layer. The polycrystalline silicon layer thus obtained has a large effective area and is suitable for a capacitor electrode because of its increased effective surface area.
公开/授权文献
- US4848960A Finishing machine for a concrete surface 公开/授权日：1989-07-18
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