A semiconductor device for measuring force components, acceleration, and/or angular rate, formed from a single crystal (monocrystalline semiconductor substrate) comprises at least one cantilever beam inclined to the main surface of the monocrystalline material of the monocrystalline semiconductor substrate. At least one interial mass may be coupled to a corresponding at least one cantilever beam and be integrally formed from the monocrystalline semiconductor substrate. The angle of the cantilever beam to the main surface of the monocrystalline material of the monocrystalline semiconductor substrate is achieved through etching of the monocrystalline semiconductor substrate and is defined by the inclination of crystal planes constituting the beam. The bending of the inclined cantilever beam principally occurs in a direction toward the beam.