Invention Grant
- Patent Title: Antireflection mask for contact hole opening
- Patent Title (中): 用于接触孔开口的防反射罩
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Application No.: US725809Application Date: 1996-10-04
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Publication No.: US5728493APublication Date: 1998-03-17
- Inventor: Chet Ping Lim , Ron-Fu Chu
- Applicant: Chet Ping Lim , Ron-Fu Chu
- Applicant Address: SGX Singapore
- Assignee: Chartered Semiconductor Manufacturing PTE LTD
- Current Assignee: Chartered Semiconductor Manufacturing PTE LTD
- Current Assignee Address: SGX Singapore
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F9/00
Abstract:
An antireflection mask and method of using the antireflection mask to form contact holes for an integrated circuit wafer are described. The antireflection mask has a patterned opaque layer formed on a transparent mask substrate. The patterned opaque layer has first openings for exposing photoresist in regions where the photoresist is thicker and second openings for exposing photoresist in regions where the photoresist is thinner. A patterned layer of antireflection material having a light transmittance of less than 100% is formed over the second openings but not over the first openings. Light is passed through the mask to expose a layer of photoresist. The light exposing the thinner photoresist regions is attenuated by the antireflection material thereby compensating for variations in photoresist thickness. In addition the antireflection material reduces reflections from the patterned opaque layer of the mask.
Public/Granted literature
- US5407654A Synthetic crystalline aluminosilicate for the catalytic conversion of hydrocarbons in petrochemical processes Public/Granted day:1995-04-18
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