公开(公告)号：US5728493A

公开(公告)日：1998-03-17

申请号：US725809

申请日：1996-10-04

Applicant: Chet Ping Lim ,  Ron-Fu Chu

Inventor： Chet Ping Lim ,  Ron-Fu Chu

IPC: G03F1/00 ,  G03F9/00

CPC classification number: G03F1/50

Abstract: An antireflection mask and method of using the antireflection mask to form contact holes for an integrated circuit wafer are described. The antireflection mask has a patterned opaque layer formed on a transparent mask substrate. The patterned opaque layer has first openings for exposing photoresist in regions where the photoresist is thicker and second openings for exposing photoresist in regions where the photoresist is thinner. A patterned layer of antireflection material having a light transmittance of less than 100% is formed over the second openings but not over the first openings. Light is passed through the mask to expose a layer of photoresist. The light exposing the thinner photoresist regions is attenuated by the antireflection material thereby compensating for variations in photoresist thickness. In addition the antireflection material reduces reflections from the patterned opaque layer of the mask.

Abstract translation: 描述了使用抗反射掩模形成用于集成电路晶片的接触孔的抗反射掩模和方法。 抗反射掩模具有形成在透明掩模基板上的图案化不透明层。 图案化的不透明层具有用于在光致抗蚀剂更厚的区域中曝光光致抗蚀剂的第一开口和用于在光刻胶更薄的区域中曝光光致抗蚀剂的第二开口。 在第二开口上形成透光率小于100％的防反射材料的图案层，但不在第一开口上。 光通过掩模曝光一层光致抗蚀剂。 暴露更薄的光致抗蚀剂区域的光被抗反射材料衰减，从而补偿光致抗蚀剂厚度的变化。 此外，抗反射材料减少了掩模的图案化不透明层的反射。