发明授权
US5728508A Method of forming resist pattern utilizing fluorinated resin
antireflective film layer
失效
利用氟化树脂防反射膜层形成抗蚀剂图案的方法
- 专利标题: Method of forming resist pattern utilizing fluorinated resin antireflective film layer
- 专利标题(中): 利用氟化树脂防反射膜层形成抗蚀剂图案的方法
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申请号: US672961申请日: 1996-07-01
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公开(公告)号: US5728508A公开(公告)日: 1998-03-17
- 发明人: Katsuya Takemura , Toshinobu Ishihara , Satoshi Watanabe , Kazumasa Maruyama , Hirofumi Kishita , Kouichi Yamaguchi
- 申请人: Katsuya Takemura , Toshinobu Ishihara , Satoshi Watanabe , Kazumasa Maruyama , Hirofumi Kishita , Kouichi Yamaguchi
- 申请人地址: JPX Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX6-069050 19940314
- 主分类号: G03F7/09
- IPC分类号: G03F7/09 ; G03C1/835
摘要:
A method of forming a resist pattern comprising forming a photoresist layer on a substrate, forming a transparent anti-reflective film on said photoresist layer by applying an anti-reflective material onto said photoresist layer, said anti-reflective material comprising a fluorinated resin which is soluble in an organic hydrocarbon solvent, exposing a light to said resist layer through said transparent anti-reflective film, removing said anti-reflective film using an organic hydrocarbon solvent, and developing said photoresist layer.
公开/授权文献
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