发明授权
US5748519A Method of selecting a memory cell in a magnetic random access memory
device
失效
选择磁性随机存取存储器件中的存储单元的方法
- 专利标题： Method of selecting a memory cell in a magnetic random access memory device
- 专利标题（中）： 选择磁性随机存取存储器件中的存储单元的方法
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申请号： US766637申请日： 1996-12-13
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公开(公告)号： US5748519A公开(公告)日： 1998-05-05
- 发明人: Saied N. Tehrani , Herbert Goronkin
- 申请人： Saied N. Tehrani , Herbert Goronkin
- 申请人地址： IL Schaumburg
- 专利权人： Motorola, Inc.
- 当前专利权人： Motorola, Inc.
- 当前专利权人地址： IL Schaumburg
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; H01L21/8246 ; H01L27/105 ; H01L21/78
摘要：
Improved methods for selecting memory cells in magnetic random access memory (MRAM) are provided. Whenever a state in a memory cell is sensed, a MRAM requires to adjust an output of comparator to a zero voltage (auto-zeroing step) before the content of memory cell is detected. This invention sequentially accesses memory cells 29-30 once sense line 25 is selected and auto-zeroed. Accordingly, a higher speed operation is attained because the invention does not require an auto-zeroing step every sensing a memory cell.
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