发明授权
- 专利标题: Integrated circuit memory devices having direct read capability
- 专利标题(中): 具有直接读取能力的集成电路存储器件
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申请号: US749332申请日: 1996-11-14
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公开(公告)号: US5748529A公开(公告)日: 1998-05-05
- 发明人: Hyong-Gon Lee
- 申请人: Hyong-Gon Lee
- 申请人地址: KRX Suwon
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KRX Suwon
- 优先权: KRX95-41506 19961115
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C16/02 ; G11C16/24 ; G11C16/26 ; G11C17/18 ; G11C16/06
摘要:
Integrated circuit memory devices having direct read capability eliminate the use of page buffers to retain bit line data during reading operations. The page buffer is replaced by a plurality of PMOS pull-up transistors which are coupled through NMOS pass transistors to respective bit lines and also directly to inputs of a column selection circuit. A PMOS pull-up transistor and sense amplifier are also preferably provided at an output of the column selection circuit so that respective bit lines can be read one-at-a-time upon sequential application of a plurality of column address signals to the column selection circuit. The output of the sense amplifier is then provided to an output buffer which is typically electrically connected to an I/O pad.
公开/授权文献
- US4101202A Varifocal camera objective with adjustment-range selection 公开/授权日:1978-07-18