发明授权
- 专利标题： Semiconductor memory device
- 专利标题（中）： 半导体存储器件
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申请号： US735835申请日： 1996-10-23
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公开(公告)号： US5748549A公开(公告)日： 1998-05-05
- 发明人: Osamu Kometani , Shoichi Wakano , Mikio Asakura
- 申请人： Osamu Kometani , Shoichi Wakano , Mikio Asakura
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha,Mitsubishi Electric Engineering Co., Ltd.
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha,Mitsubishi Electric Engineering Co., Ltd.
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX8-132015 19960527
- 主分类号： G11C5/14
- IPC分类号： G11C5/14
摘要：
A first interconnection frame is provided on a semiconductor substrate so as to surround a central circuit strip. A second interconnection frame is provided on first metal interconnection frame with an insulating film therebetween. Both ends of a supply line are in contact with second interconnection frame. There is a gap provided between both ends of a ground line and second interconnection frame. Ground line and first interconnection frame are connected, using a via hole provided in the insulating film. Thus, an improved dynamic random access memory in which the voltage levels of supply lines and ground lines are stabilized is provided.
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