公开(公告)号：US5748549A

公开(公告)日：1998-05-05

申请号：US735835

申请日：1996-10-23

申请人： Osamu Kometani ,  Shoichi Wakano ,  Mikio Asakura

发明人： Osamu Kometani ,  Shoichi Wakano ,  Mikio Asakura

IPC分类号： G11C5/14

CPC分类号： G11C5/14

摘要： A first interconnection frame is provided on a semiconductor substrate so as to surround a central circuit strip. A second interconnection frame is provided on first metal interconnection frame with an insulating film therebetween. Both ends of a supply line are in contact with second interconnection frame. There is a gap provided between both ends of a ground line and second interconnection frame. Ground line and first interconnection frame are connected, using a via hole provided in the insulating film. Thus, an improved dynamic random access memory in which the voltage levels of supply lines and ground lines are stabilized is provided.

摘要翻译： 第一互连框架设置在半导体衬底上，以围绕中央电路板。 第二互连框架设置在第一金属互连框架上，其间具有绝缘膜。 供应线的两端与第二互连框架接触。 在地线和第二互连框架的两端之间设置间隙。 使用设置在绝缘膜中的通孔连接接地线和第一互连框架。 因此，提供了其中电源线和接地线的电压电平稳定的改进的动态随机存取存储器。