发明授权
US5750898A Passivation/patterning of PZR diamond films for high temperature
transducer operability
失效
用于高温传感器可操作性的PZR金刚石膜的钝化/图案化
- 专利标题： Passivation/patterning of PZR diamond films for high temperature transducer operability
- 专利标题（中）： 用于高温传感器可操作性的PZR金刚石膜的钝化/图案化
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申请号： US727882申请日： 1996-10-09
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公开(公告)号： US5750898A公开(公告)日： 1998-05-12
- 发明人: Anthony D. Kurtz , Alexander A. Ned , Timoteo I. Vergel de Dios
- 申请人： Anthony D. Kurtz , Alexander A. Ned , Timoteo I. Vergel de Dios
- 申请人地址： NJ Leonia
- 专利权人： Kulite Semiconductor Products, Inc.
- 当前专利权人： Kulite Semiconductor Products, Inc.
- 当前专利权人地址： NJ Leonia
- 主分类号： G01L9/00
- IPC分类号： G01L9/00 ; H01L21/314 ; G01L9/06
摘要：
A method for passivating diamond films to substantially prevent them from oxidizing at temperatures up to 800.degree. C. in an oxygen atmosphere. The method involves depositing one or more passivating layers over the diamond film wherein one of the layers is nitride and the other layer is quartz. The passivation technique is directly applicable to diamond sensor pressure transducers and enable them to operate at temperatures above 800.degree. C. in oxygen environments. The passivation technique also provides an economical and simple method for patterning diamond films.
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