A voltage control circuit is used to control the voltage levels on input and output lines of a semiconductor memory device. A load transistor is controlled by feeding back an output voltage of the input and output lines in order to increase data access speed. The input and output lines are separately controlled by clamp devices that clamp low voltage levels on the input and output lines to voltages between a ground potential and a power supply voltage. The clamping devices are enabled during read operations by feeding back the output data from a sense amplifier coupled to the input and output lines. The sense amplifier senses and amplifies the voltage difference of the input and output lines. The feedback control signal from the sense amplifier eliminates DC current paths while the voltage of the input and output lines are toggled between high and low states. The voltage control circuit increases operation speed and reduces current consumption in the memory device.