发明授权
US5753193A Device for creating a deposit of silicon oxide on a traveling solid
substrate
失效
用于在移动的固体基底上产生氧化硅沉积物的装置
- 专利标题： Device for creating a deposit of silicon oxide on a traveling solid substrate
- 专利标题（中）： 用于在移动的固体基底上产生氧化硅沉积物的装置
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申请号： US449894申请日： 1995-05-23
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公开(公告)号： US5753193A公开(公告)日： 1998-05-19
- 发明人: Frank Slootman , Pascal Bouard , Fran.cedilla.ois Coeuret , Dominique Jouvaud , Eckhard Prinz
- 申请人： Frank Slootman , Pascal Bouard , Fran.cedilla.ois Coeuret , Dominique Jouvaud , Eckhard Prinz
- 申请人地址： FRX Paris DEX Hamburg
- 专利权人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,Softal Electronic GmbH
- 当前专利权人： L'Air Liquide, Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude,Softal Electronic GmbH
- 当前专利权人地址： FRX Paris DEX Hamburg
- 优先权： FRX9305063 19930429
- 主分类号： C01B33/113
- IPC分类号： C01B33/113 ; B01J19/08 ; C23C16/40 ; C23C16/455 ; C23C16/54
摘要：
A device for creating a deposit of silicon oxide on a traveling solid substrate, wherein the substrate is subjected to an electrical discharge with a dielectric barrier in the presence of a controlled atmosphere containing a silane and an oxidizing gas, the atmosphere being at a pressure higher than 10,000 Pa, and wherein the atmosphere is maintained in the immediate vicinity of an electrode in the region where the electrical discharge is produced and further wherein any entrainment of oxygen other than that forming part of the atmosphere in the region is prevented.
公开/授权文献
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