发明授权
- 专利标题： Crystallization process and method of manufacturing thin film transistor using same
- 专利标题（中）： 使用其制造薄膜晶体管的结晶工艺和方法
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申请号： US499255申请日： 1995-07-07
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公开(公告)号： US5753544A公开(公告)日： 1998-05-19
- 发明人: Won Ju Cho , Jae Sung Roh
- 申请人： Won Ju Cho , Jae Sung Roh
- 申请人地址： KRX Chungcheongbuk-Do
- 专利权人： LG Semicon Co., Ltd.
- 当前专利权人： LG Semicon Co., Ltd.
- 当前专利权人地址： KRX Chungcheongbuk-Do
- 优先权： KRX16372/1994 19940707; KRX17685/1994 19940721
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336 ; H01L29/786 ; H01L21/00
摘要：
A crystallization process comprising the steps of depositing a polycrystalline silicon layer on a semiconductor substrate, implanting silicon ions into first and second areas of the polycrystalline silicon layer in different amounts such that crystals having a predetermined plane direction remain in the second area and such that the first area becomes amorphous, and performing a thermal treatment to recrystallize the amorphous second area using the crystals having the predetermined plane direction remaining in the first area as a nucleus.
公开/授权文献
- US5269647A Wind-powered rotor 公开/授权日：1993-12-14
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