发明授权
- 专利标题： High voltage integrated circuit diode with a charge injecting node
- 专利标题（中）： 具有电荷注入节点的高压集成电路二极管
-
申请号： US726456申请日： 1996-10-04
-
公开(公告)号： US5757065A公开(公告)日： 1998-05-26
- 发明人: Steven A. Buhler , Jaime Lerma
- 申请人： Steven A. Buhler , Jaime Lerma
- 申请人地址： CT Stamford
- 专利权人： Xerox Corporation
- 当前专利权人： Xerox Corporation
- 当前专利权人地址： CT Stamford
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8238 ; H01L27/06 ; H01L29/861 ; H01L29/868 ; H01L29/06 ; H01L31/0352
摘要：
An integrated CMOS diode with an injection ring which enables construction of an integrated CMOS diode that has the performance characteristics of a high impedance value, when the diode is in the off state, and low impedance, when the diode is in the on state in addition to high breakdown voltages using standard CMOS processing techniques to construct the integrated circuit diode.
公开/授权文献
信息查询
IPC分类:
